MTM76320 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTM76320
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 1.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 18 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
Paquete / Cubierta: WSMINI6-F1-B
Búsqueda de reemplazo de MTM76320 MOSFET
MTM76320 Datasheet (PDF)
mtm76320.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).MTM76320Silicon N-channel MOS FET (FET1)Silicon P-channel MOS FET (FET2)For DC-DC converter circuitsFor switching circuits Overview PackageMTM76320 is the composite MOS FET (N-channel and P-channel MOS CodeFET) that is highly suitable for DC-DC converter and other switching circuits. WSMini6-F1-BPackage
mtm76325.pdf

Doc No. TT4-EA-13949Revision. 2Product StandardsMOS FETMTM763250LBFMTM763250LBFSilicon N-channel MOSFET (FET1)Unit : mm Silicon P-channel MOSFET (FET2)2.00.2 0.13For SwitchingFor DC-DC Converter6 5 4 FeaturesLow Drain-source On-state Resistance : RDS(on)typ. N-ch = 95 mVGS = 4.0 V) P-ch:300 m (VGS = -4.0 V)Halogen-free / RoHS compliant1
mtm76420.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).MTM76420Silicon P-channel MOS FETFor DC-DC converter circuitsFor switching circuits Overview PackageMTM76420 is the dual P-channel MOS FET that is highly suitable for DC- CodeDC converter and other switching circuits. WSMini6-F1-B Pin Name Features 1: Source 4: Source Dual P-channel MOS FET
mtm76111.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).MTM76111Silicon P-channel MOS FETFor load switch circuits Overview Package MTM76111 is the low on-resistance P-channel MOS FET designed for load Codeswitch circuits. WSMini6-F1-B Pin Name Features 1: Drain 4: Source Low drain-source ON resistance: RDS(on) typ. = 26 mW (VGS = 4.5 V)
Otros transistores... MTM60N06 , MTM68410 , MTM68411 , MTM6N60 , MTM6N90 , MTM76110 , MTM76111 , MTM76123 , IRF540 , MTM76325 , MTM76420 , MTM76520 , MTM78E2B , MTM78E2B0LBF , MTM7N45 , MTM7N50 , MTM86124 .
History: JCS12N65CEI | NCE70T900F | SQ2337ES | 2SK346 | AP6901GSM-HF | BRCS080N02ZJ | AON7518
History: JCS12N65CEI | NCE70T900F | SQ2337ES | 2SK346 | AP6901GSM-HF | BRCS080N02ZJ | AON7518



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