MTN2300AN3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTN2300AN3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.38 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 3.6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
Carga de la puerta (Qg): 4.4 nC
Tiempo de subida (tr): 7.4 nS
Conductancia de drenaje-sustrato (Cd): 61 pF
Resistencia entre drenaje y fuente RDS(on): 0.055 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET MTN2300AN3
MTN2300AN3 Datasheet (PDF)
mtn2300an3.pdf
Spec. No. : C323N3 Issued Date : 2015.01.06 CYStech Electronics Corp.Revised Date : Page No. : 1/8 20V N-Channel Enhancement Mode MOSFET BVDSS 20VMTN2300AN3 ID@VGS=4.5V, TA=25C 3.6A 29m(typ.) RDSON@VGS=4.5V, ID=3.6A 39m(typ.) RDSON@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-fr
mtn2300n3.pdf
Spec. No. : C413N3 Issued Date : 2007.07.05 CYStech Electronics Corp.Revised Date : 2015.11.12 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN2300N3 ID @VGS=4.5V, TA=25C 6.3A 23m(typ.) RDSON@VGS=4.5V, ID=6A 30m(typ.) RDSON@VGS=2.5V, ID=5.2A 64m(typ.) RDSON@VGS=1.5V, ID=500mA Features Low on-resistance Capable of 2.5V gate dr
mtn2302n3.pdf
Spec. No. : C323N3 Issued Date : 2004.04.05 CYStech Electronics Corp.Revised Date :2012.06.26 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN2302N3 ID 3.6A29m(typ.)RDSON(MAX)@VGS=4.5V, ID=3.6A 39m(typ.)RDSON(MAX)@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free le
mtn2304n3.pdf
Spec. No. : C737N3 Issued Date : 2011.11.24 CYStech Electronics Corp.Revised Date : 2012.02.10 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2304N3 ID 5A20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Outline MTN
mtn2306an3.pdf
Spec. No. : C429N3 Issued Date : 2008.08.14 CYStech Electronics Corp.Revised Date :2012.03.29 Page No. : 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2306AN3 ID 5.5A25m VGS=10V, ID=5A 27m RDSON(TYP) VGS=4.5V, ID=5A 30m VGS=2.5V, ID=2.6A Features Low on-resistance Low gate charge Excellent thermal and electrical capabilities
mtn2306zn3.pdf
Spec. No. : C582N3 Issued Date : 2011.08.30 CYStech Electronics Corp.Revised Date : Page No. : 1/ 7 20V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 20VMTN2306ZN3 ID 6A28m VGS=10V, ID=5A 30m VGS=4.5V, ID=5A Features RDSON(MAX) V =20V 40m DSVGS=2.5V, ID=2.6A@V =4.5V, I =5A R =30m GS DDS(ON)60m VGS=1.8V, ID=1A @V =2.5V, I =2.6
mtn2302v3.pdf
Spec. No. : C323V3 Issued Date : 2009.01.19 CYStech Electronics Corp.Revised Date : 2010.06.18 Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Features V =20V DS R =85m (max.)@V =4.5V, I =3.6A DS(ON) GS DS R =115m (max.)@V =2.5V, I =3.1A DS(ON) GS DS Simple drive requirement Small package outline Capable of 2.5V gate drive
mtn2304m3.pdf
Spec. No. : C737M3 Issued Date : 2012.07.26 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2304M3 ID 6A20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-fre
mtn2306am3.pdf
Spec. No. : C414M3 Issued Date : 2012.03.29 CYStech Electronics Corp.Revised Date : 2014.07.01 Page No. : 1/8 N-CHANNEL MOSFET BVDSS 30VID 6.8ARDSON@VGS=10V, ID=5.8A 25m(typ) MTN2306AM3 RDSON@VGS=4.5V, ID=5A 27m(typ) Features Low on-resistance High speed switching Low-voltage drive Easily designed drive circuits Pb-free lead plating and h
mtn2306n3.pdf
Spec. No. : C723N3 Issued Date : 2012.04.12 CYStech Electronics Corp.Revised Date : Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET MTN2306N3 BVDSS 30VID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35m RDSON(TYP)@VGS=4.5V, ID=2A 58m Features Lower gate charge Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTN2306N3 SOT
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
