MTP1N95 Todos los transistores

 ..1. Size:56K  motorola
 mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf

 9.1. Size:159K  motorola
 mtp1n50erev1x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N50E/D Designer's Data Sheet MTP1N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra

 9.2. Size:232K  motorola
 mtp1n60erev1x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N60E/D Designer's Data Sheet MTP1N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 600 VOLTS degra

 9.3. Size:139K  motorola
 mtp1n60e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N60E/D Designer's Data Sheet MTP1N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 600 VOLTS degra

 9.4. Size:112K  motorola
 mtp1n50e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N50E/D Designer's Data Sheet MTP1N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra

 9.5. Size:175K  motorola
 mtp1n60.pdf

 9.6. Size:175K  motorola
 mtp1n100e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N100E/D Designer's Data Sheet MTP1N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 1000 VOLTS de

 9.7. Size:141K  motorola
 mtp1n80e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N80E/D Designer's Data Sheet MTP1N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 800 VOLTS degra

 9.8. Size:203K  motorola
 mtp1n100erev2x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N100E/D Designer's Data Sheet MTP1N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 1000 VOLTS de

 9.9. Size:221K  motorola
 mtp1n80erev0ax.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N80E/D Designer's Data Sheet MTP1N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 800 VOLTS degra

 9.10. Size:25K  no
 mtp1n50.pdf

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE MTP1N50 PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 1.