MTP2955 Todos los transistores

 ..1. Size:56K  motorola
 mtp1n100 mtp1n55 mtp1n95 mtp20p06 mtp2955 mtp2n55 mtp2n60 mtp2n85 mtp2p45 mtp2p50 mtp3n100 mtp3n75 mtp3n80 mtp3n95 mtp3p25 mtp4n85.pdf

 0.1. Size:179K  motorola
 mtp2955e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2955E/D Designer's Data Sheet MTP2955E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 12 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS efficie

 0.2. Size:207K  motorola
 mtp2955erev2.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2955E/D Designer's Data Sheet MTP2955E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 12 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS efficie

 0.3. Size:121K  motorola
 mtp2955v.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2955V/D Designer's Data Sheet MTP2955V TMOS V Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than do

 0.4. Size:116K  motorola
 mtp2955vrev3.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2955V/D Designer's Data Sheet MTP2955V TMOS V Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than do

 0.5. Size:205K  onsemi
 mtp2955v.pdf

MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 12 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on)

 0.6. Size:560K  cystek
 mtp2955l3.pdf

Spec. No. C733L3 Issued Date 2012.02.14 CYStech Electronics Corp. Revised Date 2014.07.25 Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -60V MTP2955L3 ID -4.8A 75m (typ.) RDSON@VGS=-10V, ID=-2.4A RDSON@VGS=-10V, ID=-1.5A 74m (typ.) Features 70m (typ.) RDSON@VGS=-10V, ID=-0.75A Simple Drive Requirement RDSON@VGS=-4.5V, ID=-1.7A 99m