MTP30P06V Todos los transistores

 

MTP30P06V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP30P06V
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 54 nC
   trⓘ - Tiempo de subida: 25.9 nS
   Cossⓘ - Capacitancia de salida: 524 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO-220AB

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MTP30P06V Datasheet (PDF)

 ..1. Size:191K  motorola
mtp30p06v .pdf

MTP30P06V
MTP30P06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP30P06V/DDesigner's Data SheetMTP30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-30 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew

 ..2. Size:166K  motorola
mtp30p06v.pdf

MTP30P06V
MTP30P06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP30P06V/DDesigner's Data SheetMTP30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-30 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew

 ..3. Size:204K  onsemi
mtp30p06v.pdf

MTP30P06V
MTP30P06V

MTP30P06VPreferred DevicePower MOSFET30 Amps, 60 VoltsP-Channel TO-220This Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power30 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)

 9.1. Size:638K  1
mtp30n05e.pdf

MTP30P06V
MTP30P06V

 9.2. Size:161K  motorola
mtp3055vlrev2a.pdf

MTP30P06V
MTP30P06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

 9.3. Size:207K  motorola
mtp30n06vl.pdf

MTP30P06V
MTP30P06V

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP30N06VL/DDesigner's Data SheetMTP30N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-30 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

 9.4. Size:144K  motorola
mtp3055vl.pdf

MTP30P06V
MTP30P06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

 9.5. Size:160K  motorola
mtp3055vrev2a.pdf

MTP30P06V
MTP30P06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055V/DDesigner's Data SheetMTP3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 12 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOLTS

 9.6. Size:142K  motorola
mtp3055v.pdf

MTP30P06V
MTP30P06V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055V/DDesigner's Data SheetMTP3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 12 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOLTS

 9.7. Size:452K  st
mtp3055a-afi.pdf

MTP30P06V
MTP30P06V

 9.8. Size:294K  st
mtp3055e.pdf

MTP30P06V
MTP30P06V

MTP3055EN-CHANNEL 60V - 0.1 - 12ATO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDMTP3055E 60 V

 9.9. Size:42K  fairchild semi
mtp3055vl.pdf

MTP30P06V
MTP30P06V

June 2000DISTRIBUTION GROUP*MTP3055VLN-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral Description 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 VThis N-Channel Logic Level MOSFET has been designedspecifically for low voltage, high speed switching Critical DC electrical parameters specified at elevatedapplications i.e. power supplies and power mo

 9.10. Size:202K  onsemi
mtp3055v.pdf

MTP30P06V
MTP30P06V

MTP3055VPreferred DevicePower MOSFET12 Amps, 60 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge12 AMPEREScircuits where dio

 9.11. Size:221K  cystek
mtp3001n3.pdf

MTP30P06V
MTP30P06V

Spec. No. : C400N3 Issued Date : 2006.10.17 CYStech Electronics Corp.Revised Date : Page No. : 1/5 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP3001N3 Description The MTP3001N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features @V =-10V,

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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