MTP30P06V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTP30P06V
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 15 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 54 nC
Tiempo de subida (tr): 25.9 nS
Conductancia de drenaje-sustrato (Cd): 524 pF
Resistencia entre drenaje y fuente RDS(on): 0.08 Ohm
Paquete / Cubierta: TO-220AB
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MTP30P06V Datasheet (PDF)
mtp30p06v .pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP30P06V/DDesigner's Data SheetMTP30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-30 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew
mtp30p06v.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP30P06V/DDesigner's Data SheetMTP30P06VTMOS VMotorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-30 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew
mtp30p06v.pdf
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MTP30P06VPreferred DevicePower MOSFET30 Amps, 60 VoltsP-Channel TO-220This Power MOSFET is designed to withstand high energy in thehttp://onsemi.comavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and power30 AMPERES, 60 VOLTSmotor controls, these devices are particularly well suited for bridgeRDS(on)
mtp3055vlrev2a.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp30n06vl.pdf
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MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP30N06VL/DDesigner's Data SheetMTP30N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-30 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp3055vl.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS
mtp3055vrev2a.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055V/DDesigner's Data SheetMTP3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 12 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOLTS
mtp3055v.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055V/DDesigner's Data SheetMTP3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 12 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOLTS
mtp3055e.pdf
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MTP3055EN-CHANNEL 60V - 0.1 - 12ATO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDMTP3055E 60 V
mtp3055vl.pdf
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June 2000DISTRIBUTION GROUP*MTP3055VLN-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral Description 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 VThis N-Channel Logic Level MOSFET has been designedspecifically for low voltage, high speed switching Critical DC electrical parameters specified at elevatedapplications i.e. power supplies and power mo
mtp3055v.pdf
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MTP3055VPreferred DevicePower MOSFET12 Amps, 60 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge12 AMPEREScircuits where dio
mtp3001n3.pdf
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Spec. No. : C400N3 Issued Date : 2006.10.17 CYStech Electronics Corp.Revised Date : Page No. : 1/5 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP3001N3 Description The MTP3001N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features @V =-10V,
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .