MTP30P06V Todos los transistores

 ..1. Size:191K  motorola
 mtp30p06v .pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP30P06V/D Designer's Data Sheet MTP30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 30 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new

 ..2. Size:166K  motorola
 mtp30p06v.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP30P06V/D Designer's Data Sheet MTP30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 30 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new

 ..3. Size:204K  onsemi
 mtp30p06v.pdf

MTP30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 30 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on)

 9.1. Size:638K  1
 mtp30n05e.pdf

 9.2. Size:161K  motorola
 mtp3055vlrev2a.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 9.3. Size:207K  motorola
 mtp30n06vl.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP30N06VL/D Designer's Data Sheet MTP30N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 30 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 9.4. Size:144K  motorola
 mtp3055vl.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 9.5. Size:160K  motorola
 mtp3055vrev2a.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055V/D Designer's Data Sheet MTP3055V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 9.6. Size:142K  motorola
 mtp3055v.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055V/D Designer's Data Sheet MTP3055V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 9.7. Size:452K  st
 mtp3055a-afi.pdf

 9.8. Size:294K  st
 mtp3055e.pdf

MTP3055E N-CHANNEL 60V - 0.1 - 12ATO-220 STripFET POWER MOSFET TYPE VDSS RDS(on) ID MTP3055E 60 V

 9.9. Size:42K  fairchild semi
 mtp3055vl.pdf

June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching Critical DC electrical parameters specified at elevated applications i.e. power supplies and power mo

 9.10. Size:202K  onsemi
 mtp3055v.pdf

MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 12 AMPERES circuits where dio

 9.11. Size:221K  cystek
 mtp3001n3.pdf

Spec. No. C400N3 Issued Date 2006.10.17 CYStech Electronics Corp. Revised Date Page No. 1/5 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP3001N3 Description The MTP3001N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features @V =-10V,

 9.12. Size:478K  jiejie micro
 jmtp3008a.pdf

JMTP3008A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 15A Load Switch RDS(ON)

 9.13. Size:400K  jiejie micro
 jmtp3010d.pdf

JMTP3010D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 30V, 12A Load Switch RDS(ON)