MTP4N80E Datasheet. Equivalente

 ..1. Size:245K  motorola
 mtp4n80e.pdf

MTP4N80 PCB 24 MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N80E/D Designer's Data Sheet MTP4N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES s

 0.1. Size:159K  motorola
 mtp4n80erev5.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N80E/D Designer's Data Sheet MTP4N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 800 VOLTS degra

 8.1. Size:56K  motorola
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 9.1. Size:254K  motorola
 mtp4n50erev1a.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N50E/D Designer's Data Sheet MTP4N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 4.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new

 9.2. Size:138K  motorola
 mtp4n40e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N40E/D Designer's Data Sheet MTP4N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra

 9.3. Size:217K  motorola
 mtp4n50e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N50E/D Designer's Data Sheet MTP4N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 4.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new

 9.4. Size:239K  motorola
 mtp4n40erev2.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N40E/D Designer's Data Sheet MTP4N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra

 9.5. Size:145K  fairchild semi
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 9.6. Size:57K  njs
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 9.7. Size:107K  njs
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