SML120B10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SML120B10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 370 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 190 nC
Cossⓘ - Capacitancia de salida: 3700 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET SML120B10
SML120B10 Datasheet (PDF)
sml120b10.pdf
SML120B10TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 1200V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 10A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 1.50
sml120l16.pdf
SML120L16TO264AA Package Outline.Dimensions in mm (inches)1.80 (0.071)2.01 (0.079) NCHANNEL4.60 (0.181) 19.51 (0.768)5.21 (0.205) 26.49 (0.807)3.10 (0.122)ENHANCEMENT MODE3.48 (0.137)HIGH VOLTAGEPOWER MOSFETSVDSS 1200V1 2 32.29 (0.090)ID(cont) 16A2.69 (0.106)2.79 (0.110)3.18 (0.125)RDS(on) 0.8000.48 (0.019) 0.76 (0.030)0.84 (0.033) 1.30 (0.051)
sml1201b8.pdf
SML1201B8TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 1200V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 8A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 1.6002.2
sml120j15.pdf
SML120J15SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml120j25.pdf
SML120J25SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
Otros transistores... SML10B75XX , SML10J144 , SML10J225 , SML10L100 , SML10S75 , SML10S75XX , SML10T75XX , SML1201B8 , 20N60 , SML120B8 , SML120J15 , SML120J25 , SML120L16 , SML20B56 , SML20B67 , SML20H45 , SML20J122 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918