MTW32N25E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTW32N25E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 133 nS
Cossⓘ - Capacitancia de salida: 726 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: TO-247AE
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MTW32N25E Datasheet (PDF)
mtw32n25e.pdf

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW32N25E/DDesigner's Data SheetMTW32N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES 250 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.08 OHMenergy in
mtw32n25erev2.pdf

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW32N25E/DDesigner's Data SheetMTW32N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES 250 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.08 OHMenergy in
mtw32n20erev3.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW32N20E/DDesigner's Data SheetMTW32N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.075 OHMenergy in t
mtw32n20e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW32N20E/DDesigner's Data SheetMTW32N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.075 OHMenergy in t
Otros transistores... MTW10N40E , MTW14N50E , MTW16N40E , MTW20N50E , MTW23N25E , MTW24N40E , MTW26N15E , MTW32N20EG , 4N60 , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E , MTW7N80E , MTW8N50E , MTY100N10E .
History: BL4N80K-A | APT77N60BC6 | PJA3409 | 2SK3404-Z | AOTF290L | AP6679BMT | 2SK2632LS
History: BL4N80K-A | APT77N60BC6 | PJA3409 | 2SK3404-Z | AOTF290L | AP6679BMT | 2SK2632LS



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