MVGSF1N03LT1G Todos los transistores

 

MVGSF1N03LT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MVGSF1N03LT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT-23
     - Selección de transistores por parámetros

 

MVGSF1N03LT1G Datasheet (PDF)

 ..1. Size:114K  onsemi
mvgsf1n03l mvgsf1n03lt1g.pdf pdf_icon

MVGSF1N03LT1G

MGSF1N03L, MVGSF1N03LPower MOSFET30 V, 2.1 A, Single N-Channel, SOT-23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typicalhttp://onsemi.comhttp://onsemi.comapplications are dc-dc converters and power management in portableand battery-powered produ

 4.1. Size:127K  onsemi
mgsf1n03l mvgsf1n03l.pdf pdf_icon

MVGSF1N03LT1G

MGSF1N03L, MVGSF1N03LMOSFET Single,N-Channel, SOT-2330 V, 2.1 AThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealwww.onsemi.comfor use in space sensitive power management circuitry. Typicalapplications are dc-dc converters and power management in portableV(BR)DSS RDS(on) TYP ID MAXand battery-powered

 4.2. Size:109K  tysemi
mgsf1n03l mvgsf1n03l.pdf pdf_icon

MVGSF1N03LT1G

Product specificationMGSF1N03L, MVGSF1N03LPower MOSFETV(BR)DSS RDS(on) TYP ID MAX30 V, 2.1 A, Single N-Channel, SOT-2380 mW @ 10 V30 V 2.1 AThese miniature surface mount MOSFETs low RDS(on) assure125 mW @ 4.5 Vminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. TypicalN-Channelapplications are dc-dc con

 6.1. Size:154K  onsemi
mgsf1n02l mvgsf1n02l.pdf pdf_icon

MVGSF1N03LT1G

MGSF1N02L, MVGSF1N02LPower MOSFET750 mAmps, 20 VoltsN-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurewww.onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typical750 mAMPS, 20 VOLTSapplications are dc-dc converters and power management in portableRDS(on) = 90 mWand batte

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