MVGSF1N03LT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MVGSF1N03LT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.42 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1 nS
Cossⓘ - Capacitancia de salida: 100 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: SOT-23
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MVGSF1N03LT1G datasheet
mvgsf1n03l mvgsf1n03lt1g.pdf
MGSF1N03L, MVGSF1N03L Power MOSFET 30 V, 2.1 A, Single N-Channel, SOT-23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical http //onsemi.com http //onsemi.com applications are dc-dc converters and power management in portable and battery-powered produ
mgsf1n03l mvgsf1n03l.pdf
MGSF1N03L, MVGSF1N03L MOSFET Single, N-Channel, SOT-23 30 V, 2.1 A These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal www.onsemi.com for use in space sensitive power management circuitry. Typical applications are dc-dc converters and power management in portable V(BR)DSS RDS(on) TYP ID MAX and battery-powered
mgsf1n03l mvgsf1n03l.pdf
Product specification MGSF1N03L, MVGSF1N03L Power MOSFET V(BR)DSS RDS(on) TYP ID MAX 30 V, 2.1 A, Single N-Channel, SOT-23 80 mW @ 10 V 30 V 2.1 A These miniature surface mount MOSFETs low RDS(on) assure 125 mW @ 4.5 V minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical N-Channel applications are dc-dc con
mgsf1n02l mvgsf1n02l.pdf
MGSF1N02L, MVGSF1N02L Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 These miniature surface mount MOSFETs low RDS(on) assure www.onsemi.com minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical 750 mAMPS, 20 VOLTS applications are dc-dc converters and power management in portable RDS(on) = 90 mW and batte
Otros transistores... MTW7N80E , MTW8N50E , MTY100N10E , MVB50P03HDL , MVB50P03HDLT4G , MVGSF1N02L , MVGSF1N02LT1G , MVGSF1N03L , 4N60 , MVMBF0201NL , MVSF2N02EL , MVSF2N02ELT1G , MX2N4091 , MX2N4092 , MX2N4093 , MX2N4856 , MX2N4857 .
History: SRC65R085B
History: SRC65R085B
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