2SK2071-01L Todos los transistores

 ..1. Size:201K  inchange semiconductor
 2sk2071-01l.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2071-01L FEATURES High speed switching Low On-Resistance Low driving power High voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 0.1. Size:201K  fuji
 2sk2071-01l-s.pdf

N-channel MOS-FET 2SK2071-01L,S FAP-IIA Series 600V 6,5 2A 20W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

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 2sk2070.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2070 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2070 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the ac

 8.2. Size:132K  st
 2sk2078 stw9na80.pdf

STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V

 8.3. Size:218K  toshiba
 2sk2078.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:94K  sanyo
 2sk2074.pdf

Ordering number ENN4499 N-Channel Junction Silicon FET 2SK2074 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions AM tuner RF amplifier applications. unit mm Low-noise amplifier. 2034A [2SK2074] 2.2 4.0 Features Large yfs . Small Ciss. 0.4 0.5 Ultralow noise figure. 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate 3 Drain

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 2sk2077.pdf

 8.6. Size:224K  inchange semiconductor
 2sk2078.pdf

isc N-Channel MOSFET Transistor 2SK2078 DESCRIPTION Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drai

 8.7. Size:219K  inchange semiconductor
 2sk2077.pdf

isc N-Channel MOSFET Transistor 2SK2077 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drai