2SK602 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK602
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET 2SK602

2SK602 Datasheet (PDF)

..1. Size:234K inchange semiconductor
2sk602.pdf

isc N-Channel MOSFET Transistor 2SK602FEATURESDrain Current I =1A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , U

9.1. Size:33K panasonic
2sk601.pdf

Silicon MOS FETs (Small Signal) 2SK6012SK601Silicon N-Channel MOSUnit : mmFor switching1.5 0.14.5 0.11.6 0.2 Features Low ON-resistance RDS(on)45 High-speed switching Direct drive possible with CMOS, TTL0.4 0.080.4 0.040.5 0.08 Downsizing of sets by mini-power type package and automatic inser-1.5 0.13.0 0.15tion by magazine packing are ava

9.2. Size:357K panasonic
2sk606.pdf

http://www.semicon.panasonic.co.jp

9.3. Size:61K sony
2sk60.pdf

9.4. Size:838K cn vbsemi
2sk601.pdf

2SK601www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.102 at VGS = 10 V 4.20.120 at VGS = 6 V 100 3.8 2.9 nC0.125 at VGS = 4.5 V 3.6APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVsD

9.5. Size:206K inchange semiconductor
2sk604.pdf

isc N-Channel MOSFET Transistor 2SK604FEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , U

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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