2SK602 Todos los transistores

 ..1. Size:234K  inchange semiconductor
 2sk602.pdf

isc N-Channel MOSFET Transistor 2SK602 FEATURES Drain Current I =1A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , U

 9.1. Size:33K  panasonic
 2sk601.pdf

Silicon MOS FETs (Small Signal) 2SK601 2SK601 Silicon N-Channel MOS Unit mm For switching 1.5 0.1 4.5 0.1 1.6 0.2 Features Low ON-resistance RDS(on) 45 High-speed switching Direct drive possible with CMOS, TTL 0.4 0.08 0.4 0.04 0.5 0.08 Downsizing of sets by mini-power type package and automatic inser- 1.5 0.1 3.0 0.15 tion by magazine packing are ava

 9.2. Size:357K  panasonic
 2sk606.pdf

 9.3. Size:61K  sony
 2sk60.pdf

 9.4. Size:838K  cn vbsemi
 2sk601.pdf

2SK601 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.102 at VGS = 10 V 4.2 0.120 at VGS = 6 V 100 3.8 2.9 nC 0.125 at VGS = 4.5 V 3.6 APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs D

 9.5. Size:206K  inchange semiconductor
 2sk604.pdf

isc N-Channel MOSFET Transistor 2SK604 FEATURES Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , U