SML20B67 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SML20B67
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 370 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Corriente continua de drenaje |Id|: 67 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 175 nC
Conductancia de drenaje-sustrato (Cd): 4500 pF
Resistencia entre drenaje y fuente RDS(on): 0.038 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET SML20B67
SML20B67 Datasheet (PDF)
sml20b67 sml20b67f.pdf
SML20B67TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 200V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 67A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.0382.21
sml20b56 sml20b56f.pdf
SML20B56TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 200V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 56A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.0452.21
sml20w65.pdf
SML20W65TO267 Package Outline.Dimensions in mm (inches)NCHANNELENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETSVDSS 200VID(cont) 65ARDS(on) 0.026 Faster Switching Lower Leakage TO267 Hermetic PackageDStarMOS is a new generation of high voltageNChannel enhancement mode power MOSFETs.This new technology minimises the JFET effect,Gincreases
sml20j175.pdf
SML20J175SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml2005smd1.pdf
N-CHANNEL POWER MOSFET SML2005SMD1 Low RDS(on) MOSFET Transistor. Hermetic Ceramic Surface Mount Package Ideally suited for Power Supply, Motor Controls and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 200V VGS Gate Source Voltage 20V ID Tc = 25C Con
sml20j175f.pdf
N-CHANNEL POWER MOSFET SML20J175 Fast Switching and Low leakage 100% Avalanche Tested Popular SOT-227 Package StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieve faster switching speeds through optimised
sml20j122.pdf
SML20J122SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml20s67.pdf
SML20S67D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDSS
sml20h45.pdf
SML20H45TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 200VID(cont) 45ARDS(on) 0.0405.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower Le
sml20j97 sml20j97f.pdf
SML20J97SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3V
sml20l100 sml20l100f.pdf
SML20L100TO264AA Package Outline.Dimensions in mm (inches)1.80 (0.071)2.01 (0.079) NCHANNEL4.60 (0.181) 19.51 (0.768)5.21 (0.205) 26.49 (0.807)3.10 (0.122)ENHANCEMENT MODE3.48 (0.137)HIGH VOLTAGEPOWER MOSFETSVDSS 200V1 2 32.29 (0.090)ID(cont) 100A2.69 (0.106)2.79 (0.110)3.18 (0.125)RDS(on) 0.0220.48 (0.019) 0.76 (0.030)0.84 (0.033) 1.30 (0.051)
sml20t75.pdf
SML20T75T247clip Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610)NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODE5.38 (0.212)6.20 (0.244)HIGH VOLTAGEPOWER MOSFETS2VDSS 200V1 2 32.87 (0.113)ID(cont) 100A0.40 (0.016)3.12 (0.123) 0.79 (0.031)1.65 (0.065)2.13 (0.084) RDS(on) 0.0221.01 (0.040)1.40 (0.05
sml20s56.pdf
SML20S56D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDSS
Otros transistores... SML10T75XX , SML1201B8 , SML120B10 , SML120B8 , SML120J15 , SML120J25 , SML120L16 , SML20B56 , IRFP460 , SML20H45 , SML20J122 , SML20J175 , SML20J97 , SML20L100 , SML20S56 , SML20S67 , SML20T75 .
