SML20B67 Todos los transistores

 

SML20B67 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML20B67

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 370 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Id|ⓘ - Corriente continua de drenaje: 67 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 4500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm

Encapsulados: TO247

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SML20B67 datasheet

 ..1. Size:21K  semelab
sml20b67 sml20b67f.pdf pdf_icon

SML20B67

SML20B67 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 200V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 67A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.038 2.21

 8.1. Size:21K  semelab
sml20b56 sml20b56f.pdf pdf_icon

SML20B67

SML20B56 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 200V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 56A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.045 2.21

 9.1. Size:26K  semelab
sml20w65.pdf pdf_icon

SML20B67

SML20W65 TO 267 Package Outline. Dimensions in mm (inches) N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 200V ID(cont) 65A RDS(on) 0.026 Faster Switching Lower Leakage TO 267 Hermetic Package D StarMOS is a new generation of high voltage N Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, G increases

 9.2. Size:23K  semelab
sml20j175.pdf pdf_icon

SML20B67

SML20J175 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3

Otros transistores... SML10T75XX , SML1201B8 , SML120B10 , SML120B8 , SML120J15 , SML120J25 , SML120L16 , SML20B56 , IRFZ44 , SML20H45 , SML20J122 , SML20J175 , SML20J97 , SML20L100 , SML20S56 , SML20S67 , SML20T75 .

 

 

 


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