2SK629 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK629 Datasheet (PDF)

..1. Size:241K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK629FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

9.1. Size:35K panasonic
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Silicon MOS FETs (Small Signal) 2SK6202SK620Silicon N-Channel MOSUnit : mmFor switching+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching1 Downsizing of sets by mini-type package and automatic insertion bytaping/magazine packing are available.32 Absolute Maximum Ratings (Ta = 25C)0.1 to 0.3Parameter Symbol Rating Unit0.4

9.2. Size:236K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK622DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies

9.3. Size:241K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK627FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dri

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