2SK629 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK629FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Silicon MOS FETs (Small Signal) 2SK6202SK620Silicon N-Channel MOSUnit : mmFor switching+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching1 Downsizing of sets by mini-type package and automatic insertion bytaping/magazine packing are available.32 Absolute Maximum Ratings (Ta = 25C)0.1 to 0.3Parameter Symbol Rating Unit0.4

isc N-Channel MOSFET Transistor 2SK622DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies

isc N-Channel MOSFET Transistor 2SK627FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dri