2SK629 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK629
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de 2SK629 MOSFET
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2SK629 datasheet
2sk629.pdf
isc N-Channel MOSFET Transistor 2SK629 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
2sk622.pdf
isc N-Channel MOSFET Transistor 2SK622 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =150V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies
2sk627.pdf
isc N-Channel MOSFET Transistor 2SK627 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dri
Otros transistores... 2SK566 , 2SK602 , 2SK604 , 2SK610 , 2SK616 , 2SK617 , 2SK622 , 2SK627 , 60N06 , 2SK630 , 2SK631 , 2SK632 , 2SK633 , 2SK634 , 2SK635 , 2SK636 , 2SK637 .
History: SI6821DQ | MX2N5116 | 2SK636 | 2SK633
History: SI6821DQ | MX2N5116 | 2SK636 | 2SK633
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