2SK637 Todos los transistores

 ..1. Size:242K  inchange semiconductor
 2sk637.pdf

isc N-Channel MOSFET Transistor 2SK637 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay d

 9.1. Size:242K  inchange semiconductor
 2sk632.pdf

isc N-Channel MOSFET Transistor 2SK632 FEATURES Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dr

 9.2. Size:242K  inchange semiconductor
 2sk630.pdf

isc N-Channel MOSFET Transistor 2SK630 FEATURES Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 160V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dri

 9.3. Size:241K  inchange semiconductor
 2sk631.pdf

isc N-Channel MOSFET Transistor 2SK631 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 160V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay d

 9.4. Size:242K  inchange semiconductor
 2sk634.pdf

isc N-Channel MOSFET Transistor 2SK634 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay d

 9.5. Size:242K  inchange semiconductor
 2sk635.pdf

isc N-Channel MOSFET Transistor 2SK635 FEATURES Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dr

 9.6. Size:237K  inchange semiconductor
 2sk638.pdf

isc N-Channel MOSFET Transistor 2SK638 FEATURES Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dr

 9.7. Size:242K  inchange semiconductor
 2sk636.pdf

isc N-Channel MOSFET Transistor 2SK636 FEATURES Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dr

 9.8. Size:241K  inchange semiconductor
 2sk633.pdf

isc N-Channel MOSFET Transistor 2SK633 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operatio DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dr