2SK745 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK745
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: TO3P

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2SK745 Datasheet (PDF)

..1. Size:235K inchange semiconductor
2sk745.pdf

isc N-Channel MOSFET Transistor 2SK745FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

9.1. Size:239K 1
2sk741.pdf

9.2. Size:1358K renesas
2sk740.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.3. Size:240K inchange semiconductor
2sk746.pdf

isc N-Channel MOSFET Transistor 2SK746FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

9.4. Size:233K inchange semiconductor
2sk749.pdf

isc N-Channel MOSFET Transistor 2SK749DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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