2SK749 Todos los transistores

 ..1. Size:233K  inchange semiconductor
 2sk749.pdf

isc N-Channel MOSFET Transistor 2SK749 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

 9.1. Size:239K  1
 2sk741.pdf

 9.2. Size:1358K  renesas
 2sk740.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:240K  inchange semiconductor
 2sk746.pdf

isc N-Channel MOSFET Transistor 2SK746 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.4. Size:235K  inchange semiconductor
 2sk745.pdf

isc N-Channel MOSFET Transistor 2SK745 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR