SML20J175 Todos los transistores

 

SML20J175 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML20J175

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 700 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Id|ⓘ - Corriente continua de drenaje: 175 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 18000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: SOT227

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SML20J175 datasheet

 ..1. Size:23K  semelab
sml20j175.pdf pdf_icon

SML20J175

SML20J175 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3

 0.1. Size:181K  semelab
sml20j175f.pdf pdf_icon

SML20J175

N-CHANNEL POWER MOSFET SML20J175 Fast Switching and Low leakage 100% Avalanche Tested Popular SOT-227 Package StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFET s. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieve faster switching speeds through optimised

 7.1. Size:23K  semelab
sml20j122.pdf pdf_icon

SML20J175

SML20J122 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3

 8.1. Size:23K  semelab
sml20j97 sml20j97f.pdf pdf_icon

SML20J175

SML20J97 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V

Otros transistores... SML120B8 , SML120J15 , SML120J25 , SML120L16 , SML20B56 , SML20B67 , SML20H45 , SML20J122 , IRLZ44N , SML20J97 , SML20L100 , SML20S56 , SML20S67 , SML20T75 , SML20W65 , SML30A33 , SML30B40 .

 

 

 


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