SML20S67 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SML20S67
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 370 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Id|ⓘ - Corriente continua
de drenaje: 67 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 4500 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Encapsulados: D3PAK
Búsqueda de reemplazo de SML20S67 MOSFET
- Selecciónⓘ de transistores por parámetros
SML20S67 datasheet
..1. Size:20K semelab
sml20s67.pdf 
SML20S67 D3PAK Package Outline. Dimensions in mm (inches) N CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDSS
8.1. Size:20K semelab
sml20s56.pdf
SML20S56 D3PAK Package Outline. Dimensions in mm (inches) N CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDSS
9.1. Size:26K semelab
sml20w65.pdf
SML20W65 TO 267 Package Outline. Dimensions in mm (inches) N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 200V ID(cont) 65A RDS(on) 0.026 Faster Switching Lower Leakage TO 267 Hermetic Package D StarMOS is a new generation of high voltage N Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, G increases
9.2. Size:23K semelab
sml20j175.pdf
SML20J175 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3
9.3. Size:457K semelab
sml2005smd1.pdf
N-CHANNEL POWER MOSFET SML2005SMD1 Low RDS(on) MOSFET Transistor. Hermetic Ceramic Surface Mount Package Ideally suited for Power Supply, Motor Controls and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage 200V VGS Gate Source Voltage 20V ID Tc = 25 C Con
9.4. Size:21K semelab
sml20b67 sml20b67f.pdf
SML20B67 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 200V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 67A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.038 2.21
9.5. Size:181K semelab
sml20j175f.pdf
N-CHANNEL POWER MOSFET SML20J175 Fast Switching and Low leakage 100% Avalanche Tested Popular SOT-227 Package StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFET s. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieve faster switching speeds through optimised
9.6. Size:23K semelab
sml20j122.pdf
SML20J122 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3
9.7. Size:21K semelab
sml20b56 sml20b56f.pdf
SML20B56 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 200V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 56A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.045 2.21
9.8. Size:26K semelab
sml20h45.pdf
SML20H45 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 200V ID(cont) 45A RDS(on) 0.040 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower Le
9.9. Size:23K semelab
sml20j97 sml20j97f.pdf
SML20J97 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V
9.11. Size:19K semelab
sml20t75.pdf
SML20T75 T247clip Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE 5.38 (0.212) 6.20 (0.244) HIGH VOLTAGE POWER MOSFETS 2 VDSS 200V 1 2 3 2.87 (0.113) ID(cont) 100A 0.40 (0.016) 3.12 (0.123) 0.79 (0.031) 1.65 (0.065) 2.13 (0.084) RDS(on) 0.022 1.01 (0.040) 1.40 (0.05
Otros transistores... SML20B56
, SML20B67
, SML20H45
, SML20J122
, SML20J175
, SML20J97
, SML20L100
, SML20S56
, AO3400
, SML20T75
, SML20W65
, SML30A33
, SML30B40
, SML30B48
, SML30J130
, SML30J70
, SML30L76
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