GP1M009A090XX Todos los transistores

 

GP1M009A090XX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GP1M009A090XX
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 290 W
   Voltaje máximo drenador - fuente |Vds|: 900 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 9 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 65 nC
   Tiempo de subida (tr): 49 nS
   Conductancia de drenaje-sustrato (Cd): 184 pF
   Resistencia entre drenaje y fuente RDS(on): 1.4 Ohm
   Paquete / Cubierta: TO-220 TO-220F

 Búsqueda de reemplazo de MOSFET GP1M009A090XX

 

GP1M009A090XX Datasheet (PDF)

 ..1. Size:390K  globalpower
gp1m009a090xx.pdf

GP1M009A090XX
GP1M009A090XX

GP1M009A090HGP1M009A090FHVDSS = 990 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.4 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M009A090H TO-220 GP1M009A090H RoHSGP1M009A090FH TO-220F GP1M009A090FH Halogen FreeAbsolute M

 3.1. Size:539K  globalpower
gp1m009a090n.pdf

GP1M009A090XX
GP1M009A090XX

GP1M009A090N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 900V 9.5A

 5.1. Size:408K  globalpower
gp1m009a050xxx.pdf

GP1M009A090XX
GP1M009A090XX

GP1M009A050HSGP1M009A050FSHN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge500V 8.5A

 5.2. Size:378K  globalpower
gp1m009a070x.pdf

GP1M009A090XX
GP1M009A090XX

GP1M009A070HGP1M006A070FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge700V 7A

 5.3. Size:405K  globalpower
gp1m009a020xx.pdf

GP1M009A090XX
GP1M009A090XX

GP1M009A020HGGP1M009A020FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on)MAX 100% avalanche tested200V 9A

 5.4. Size:503K  globalpower
gp1m009a020xg.pdf

GP1M009A090XX
GP1M009A090XX

GP1M009A020CG GP1M009A020PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A

 5.5. Size:390K  globalpower
gp1m009a060xx.pdf

GP1M009A090XX
GP1M009A090XX

GP1M009A060HGP1M009A060FHVDSS = 660 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.0 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkGP1M009A060H TO-220 GP1M009A060H RoHSGP1M009A060FH TO-220F GP1M009A060FH Halogen FreeAbsolute Ma

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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