GSM1012E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM1012E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm

Encapsulados: SOT-523

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GSM1012E datasheet

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GSM1012E

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m @VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltage power

 7.1. Size:987K  globaltech semi
 gsm1012.pdf pdf_icon

GSM1012E

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low Low-Voltage Operation

 8.1. Size:621K  globaltech semi
 gsm1013e.pdf pdf_icon

GSM1012E

GSM1013E 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-0.6A,RDS(ON)=800m @VGS=-4.5V GSM1013E, P-Channel enhancement mode -20V/-0.5A,RDS(ON)=950m @VGS=-2.5V MOSFET, uses Advanced Trench Technology to -20V/-0.4A,RDS(ON)=1250m @VGS=-1.8V provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage Low-Voltage Operation These devi

 8.2. Size:3060K  globaltech semi
 gsm1016.pdf pdf_icon

GSM1012E

GSM1016 N & P Pair Enhancement Mode MOSFET Product Description Features GSM1016, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 20V/0.6A,RDS(ON)=360m @VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/0.5A,RDS(ON)=420m @VGS=2.5V 20V/0.4A,RDS(ON)=560m @VGS=1.8V These devices are particularly suited for low P-Channel voltage power ma

MOSTRAR MÁS

Otros transistores... GP2M012A060X, GP2M012A080NG, GP2M013A050F, GP2M020A050N, GP2M020A050X, GP2M020A060N, GP2M023A050N, GSM1012, IRFP250, GSM1013, GSM1013E, GSM1016, GSM1023, GSM1024, GSM1024E, GSM1026S, GSM1032