GSM1024 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM1024

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm

Encapsulados: SOT-563

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GSM1024 datasheet

 ..1. Size:940K  globaltech semi
 gsm1024.pdf pdf_icon

GSM1024

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m @VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltag

 0.1. Size:937K  globaltech semi
 gsm1024e.pdf pdf_icon

GSM1024

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench 20V/0.5A,RDS(ON)=420m @VGS=2.5V Technology to provide excellent RDS(ON), low 20V/0.4A,RDS(ON)=560m @VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low

 8.1. Size:972K  globaltech semi
 gsm1023.pdf pdf_icon

GSM1024

GSM1023 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1023, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m @VGS=-4.5V MOSFET, uses Advanced Trench -20V/-0.35A,RDS(ON)=860m @VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-0.25A,RDS(ON)=1450m @VGS=-1.8V gate charge. Low Offset (Error) Voltage These devices are particula

 8.2. Size:1054K  globaltech semi
 gsm1026s.pdf pdf_icon

GSM1024

GSM1026S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1026S, N-Channel enhancement mode 60V/0.5A,RDS(ON)=2.4 @VGS=10V MOSFET, uses Advanced Trench 60V/0.2A,RDS(ON)=3.0 @VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. low RDS(ON) These devices are particularly suited for low Exception

MOSTRAR MÁS

Otros transistores... GP2M020A060N, GP2M023A050N, GSM1012, GSM1012E, GSM1013, GSM1013E, GSM1016, GSM1023, RFP50N06, GSM1024E, GSM1026S, GSM1032, GSM1034, GSM1072, GSM1072E, GSM1073, GSM1073E