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GSM1024 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM1024
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: SOT-563
     - Selección de transistores por parámetros

 

GSM1024 Datasheet (PDF)

 ..1. Size:940K  globaltech semi
 gsm1024.pdf pdf_icon

GSM1024

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.5A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. These 20V/0.4A,RDS(ON)=560m@VGS=1.8V devices are particularly suited for low voltage Low Offset (Error) Voltag

 0.1. Size:937K  globaltech semi
 gsm1024e.pdf pdf_icon

GSM1024

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench 20V/0.5A,RDS(ON)=420m@VGS=2.5V Technology to provide excellent RDS(ON), low 20V/0.4A,RDS(ON)=560m@VGS=1.8V gate charge. Low Offset (Error) Voltage These devices are particularly suited for low

 8.1. Size:972K  globaltech semi
 gsm1023.pdf pdf_icon

GSM1024

GSM1023 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1023, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench -20V/-0.35A,RDS(ON)=860m@VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-0.25A,RDS(ON)=1450m@VGS=-1.8V gate charge. Low Offset (Error) Voltage These devices are particula

 8.2. Size:1054K  globaltech semi
 gsm1026s.pdf pdf_icon

GSM1024

GSM1026S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM1026S, N-Channel enhancement mode 60V/0.5A,RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench 60V/0.2A,RDS(ON)=3.0@VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. low RDS(ON) These devices are particularly suited for low Exception

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRLI520A | IRFB16N60LPBF | IPD06N03LBG | HGP046NE6AL | SVF7N65CMJ | PHW9N60E | MTB09N03H8

 

 
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