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GSM2311 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM2311
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm
   Paquete / Cubierta: SOT-23-3L
 

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GSM2311 Datasheet (PDF)

 ..1. Size:416K  globaltech semi
 gsm2311.pdf pdf_icon

GSM2311

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench -20V/-3.2A,RDS(ON)=70m@VGS=2.5V Technology to provide excellent RDS(ON), low -20V/-2.8A,RDS(ON)=96m@VGS=1.8V gate charge. Super high density cell design for These devices are particularly suited f

 0.1. Size:847K  globaltech semi
 gsm2311a.pdf pdf_icon

GSM2311

GSM2311A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=68m@VGS=-4.5V MOSFET, uses Advanced Trench -20V/-2.2A,RDS(ON)=80m@VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-1.8A,RDS(ON)=105m@VGS=-1.8V gate charge. Super high density cell design for These devices are parti

 8.1. Size:944K  globaltech semi
 gsm2317.pdf pdf_icon

GSM2311

GSM2317 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.2A,RDS(ON)=67m@VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

 8.2. Size:951K  globaltech semi
 gsm2319as.pdf pdf_icon

GSM2311

GSM2319AS 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m@VGS=-10V MOSFET, uses Advanced Trench -40V/-2.4A,RDS(ON)=120m@VGS=-4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance andThes

MOSTRAR MÁS

Otros transistores... GSM2304S , GSM2306A , GSM2306AE , GSM2307A , GSM2308 , GSM2308A , GSM2309 , GSM2309A , IRF540N , GSM2311A , GSM2312 , GSM2312A , GSM2317 , GSM2318 , GSM2318A , GSM2319A , GSM2319AS .

History: 13N50G-TQ2-R | UPA1816GR

 

 
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