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GSM3346W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM3346W
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: DFN3X3-8L
 

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GSM3346W Datasheet (PDF)

 ..1. Size:1456K  globaltech semi
 gsm3346w.pdf pdf_icon

GSM3346W

GSM3346W 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3346W, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)=28m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)=38m@VGS=4.5V P-ChannelThese devices are particularly suited for low -40V/-12A,RDS(ON)=45m@VGS=-10V voltage p

 9.1. Size:816K  globaltech semi
 gsm3310w.pdf pdf_icon

GSM3346W

GSM3310W GSM3310W 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=19m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited f

 9.2. Size:897K  globaltech semi
 gsm3309ws.pdf pdf_icon

GSM3346W

GSM3309WS GSM3309WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=11m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited

 9.3. Size:1204K  globaltech semi
 gsm3366w.pdf pdf_icon

GSM3346W

GSM3366W 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3366W, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=48m@VGS=10V provide excellent RDS(ON), low gate charge. 60V/10A,RDS(ON)=54m@VGS=4.5V P-ChannelThese devices are particularly suited for low -60V/-8A,RDS(ON)=105m@VGS=-10V voltage p

MOSTRAR MÁS

Otros transistores... GSM3030 , GSM3050S , GSM3302W , GSM3306WS , GSM3309WS , GSM3310W , GSM3316W , GSM3326WS , AON7506 , GSM3366W , GSM3400 , GSM3400A , GSM3400AS , GSM3400S , GSM3401AS , GSM3401S , GSM3402 .

History: IPU60R1K0CE | SIHFPF50 | NTBS2D7N06M7 | BRCS050N04BD | BRCS050N03YB | IXTH12N45A | MTN4N70I3

 

 
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