GSM3401S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSM3401S
   Código: 3S*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: SOT-23-3L

Búsqueda de reemplazo de MOSFET GSM3401S

GSM3401S Datasheet (PDF)

..1. Size:1426K globaltech semi
gsm3401s.pdf

GSM3401S GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.2A RDS(ON)=80m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A RDS(ON)=105m@VGS=-2.5V Super high density cell design for extremely These devi

7.1. Size:612K globaltech semi
gsm3401as.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-1.8 RDS(ON)=80m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105m@VGS=-2.5V These devices are particularly suited for low Super high density cell de

8.1. Size:891K globaltech semi
gsm3400.pdf

GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m@VGS=2.5V gate charge. These devices are particularly Super high density cell des

8.2. Size:867K globaltech semi
gsm3404.pdf

GSM3404 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.2A,RDS(ON)=34m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta

8.3. Size:898K globaltech semi
gsm3403a.pdf

GSM3403A GSM3403A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.6A,RDS(ON)=130m@VGS=-10V GSM3403A, P-Channel enhancement mode -30V/-2.2A,RDS(ON)=160m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -30V/-1.2A,RDS(ON)=270m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremel

8.4. Size:453K globaltech semi
gsm3402a.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=87m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m@VGS=2.5V These devices are particularly suited for low Super high density cell design for

8.5. Size:922K globaltech semi
gsm3400a.pdf

GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V Super high density cell design for These devices are particularly suited for lo

8.6. Size:885K globaltech semi
gsm3406s.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

8.7. Size:864K globaltech semi
gsm3407s.pdf

GSM3407S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=95m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

8.8. Size:851K globaltech semi
gsm3405.pdf

GSM3405 GSM3405 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-2.8A,RDS(ON)=50m@VGS=-4.5V provide excellent RDS(ON) low gate charge. These Super high density cell design for extremely devices are particularly suited for low

8.9. Size:884K globaltech semi
gsm3406.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

8.10. Size:846K globaltech semi
gsm3407as.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.4A,RDS(ON)=102m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON)

8.11. Size:1144K globaltech semi
gsm3402.pdf

GSM3402 GSM3402 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402, N-Channel enhancement mode 30V/4.0A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=80m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=100m@VGS=2.5V gate charge. These devices are particularly Super high density cell de

8.12. Size:863K globaltech semi
gsm3406a.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

8.13. Size:898K globaltech semi
gsm3403.pdf

GSM3403 GSM3403 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-3.0A,RDS(ON)=125m@VGS=-10V GSM3403, P-Channel enhancement mode -30V/-2.6A,RDS(ON)=155m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -30V/-1.2A,RDS(ON)=220m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely

8.14. Size:452K globaltech semi
gsm3400as.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=50m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=75m@VGS=2.5V These devices are particularly suited for low Super high density cell design for

8.15. Size:877K globaltech semi
gsm3406as.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.4A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) powe

8.16. Size:921K globaltech semi
gsm3400s.pdf

GSM3400S GSM3400S 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/4.0A,RDS(ON)=42m@VGS=10V GSM3400S, N-Channel enhancement mode 30V/3.0A,RDS(ON)=44m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=50m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) The

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