GSM3406A Todos los transistores

 

GSM3406A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM3406A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
   Paquete / Cubierta: SOT-23
 

 Búsqueda de reemplazo de GSM3406A MOSFET

   - Selección ⓘ de transistores por parámetros

 

GSM3406A Datasheet (PDF)

 ..1. Size:863K  globaltech semi
 gsm3406a.pdf pdf_icon

GSM3406A

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 0.1. Size:877K  globaltech semi
 gsm3406as.pdf pdf_icon

GSM3406A

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.4A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) powe

 7.1. Size:885K  globaltech semi
 gsm3406s.pdf pdf_icon

GSM3406A

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 7.2. Size:884K  globaltech semi
 gsm3406.pdf pdf_icon

GSM3406A

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

MOSTRAR MÁS

Otros transistores... GSM3401S , GSM3402 , GSM3402A , GSM3403 , GSM3403A , GSM3404 , GSM3405 , GSM3406 , 10N65 , GSM3406AS , GSM3406S , GSM3407AS , GSM3407S , GSM3410 , GSM3411 , GSM3413 , GSM3413A .

History: UF740G-TF1-T | CEU83A3G | 7NM65L-TN3-R | 7N80L-TF3T-T | MPSW60M082 | GSM3402 | TPA65R600C

 

 
Back to Top

 


 
.