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GSM4134 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4134

Código: 4134

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.8 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.3 V

Carga de compuerta (Qg): 8 nC

Tiempo de elevación (tr): 8 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.015 Ohm

Empaquetado / Estuche: SOP-8P

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GSM4134 Datasheet (PDF)

1.1. gsm4134.pdf Size:843K _update-mosfet

GSM4134
GSM4134

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=20mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P package design

1.2. gsm4134w.pdf Size:845K _update-mosfet

GSM4134
GSM4134

GSM4134W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P pac

 1.3. gsm4134.pdf Size:843K _globaltech_semi

GSM4134
GSM4134

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=20mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P package design

1.4. gsm4134w.pdf Size:845K _globaltech_semi

GSM4134
GSM4134

GSM4134W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P pac

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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