GSM4214 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM4214
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de GSM4214 MOSFET
GSM4214 Datasheet (PDF)
gsm4214.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=20m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana
gsm4214w.pdf

GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S
gsm4210w.pdf

GSM4210W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210W, N-Channel enhancement mode 30V/6.8A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.6A,RDS(ON)=40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm4210.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode 30V/6.8A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.6A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
Otros transistores... GSM4102W , GSM4124WS , GSM4134 , GSM4134W , GSM4172S , GSM4172WS , GSM4210 , GSM4210W , IRF3710 , GSM4214W , GSM4228 , GSM4248W , GSM4401S , GSM4403 , GSM4412 , GSM4412W , GSM4422 .



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