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GSM4401S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4401S

Código: 4401S

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.8 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 30 nC

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 350 pF

Resistencia drenaje-fuente RDS(on): 0.013 Ohm

Empaquetado / Estuche: SOP-8

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GSM4401S Datasheet (PDF)

1.1. gsm4401s.pdf Size:1032K _update-mosfet

GSM4401S
GSM4401S

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16mΩ@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

1.2. gsm4401s.pdf Size:1032K _globaltech_semi

GSM4401S
GSM4401S

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16mΩ@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 4.1. gsm4403.pdf Size:793K _update-mosfet

GSM4401S
GSM4401S

GSM4403 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM4403, P-Channel enhancement mode  -20V/-9A,RDS(ON)=26mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  -20V/-8A,RDS(ON)=34mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge.  -20V/-6A,RDS(ON)=48mΩ@VGS=-1.8V  Super high density cell design for extremely These devices are par

4.2. gsm4403.pdf Size:793K _globaltech_semi

GSM4401S
GSM4401S

GSM4403 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM4403, P-Channel enhancement mode  -20V/-9A,RDS(ON)=26mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  -20V/-8A,RDS(ON)=34mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge.  -20V/-6A,RDS(ON)=48mΩ@VGS=-1.8V  Super high density cell design for extremely These devices are par

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