GSM4401S Todos los transistores

 

GSM4401S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM4401S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: SOP-8
 

 Búsqueda de reemplazo de GSM4401S MOSFET

   - Selección ⓘ de transistores por parámetros

 

GSM4401S Datasheet (PDF)

 ..1. Size:1032K  globaltech semi
gsm4401s.pdf pdf_icon

GSM4401S

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 8.1. Size:793K  globaltech semi
gsm4403.pdf pdf_icon

GSM4401S

GSM4403 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-8A,RDS(ON)=34m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m@VGS=-1.8V Super high density cell design for extremely These devices are par

 9.1. Size:906K  globaltech semi
gsm4412w.pdf pdf_icon

GSM4401S

GSM4412W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412W, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.2A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:1289K  globaltech semi
gsm4440.pdf pdf_icon

GSM4401S

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

Otros transistores... GSM4172S , GSM4172WS , GSM4210 , GSM4210W , GSM4214 , GSM4214W , GSM4228 , GSM4248W , IRFB4110 , GSM4403 , GSM4412 , GSM4412W , GSM4422 , MTB36N06V , PHP36N06E , PHB36N06E , FTD36N06N .

History: SM6020NSW | HFS8N70U | OSG55R190DF | FS10UM-6 | 24N50C

 

 
Back to Top

 


 
.