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GSM4403 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4403

Código: 4403

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.8 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 0.9 V

Carga de compuerta (Qg): 17 nC

Tiempo de elevación (tr): 30 nS

Conductancia de drenaje-sustrato (Cd): 350 pF

Resistencia drenaje-fuente RDS(on): 0.026 Ohm

Empaquetado / Estuche: SOP-8P

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GSM4403 Datasheet (PDF)

1.1. gsm4403.pdf Size:793K _update-mosfet

GSM4403
GSM4403

GSM4403 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM4403, P-Channel enhancement mode  -20V/-9A,RDS(ON)=26mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  -20V/-8A,RDS(ON)=34mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge.  -20V/-6A,RDS(ON)=48mΩ@VGS=-1.8V  Super high density cell design for extremely These devices are par

1.2. gsm4403.pdf Size:793K _globaltech_semi

GSM4403
GSM4403

GSM4403 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM4403, P-Channel enhancement mode  -20V/-9A,RDS(ON)=26mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  -20V/-8A,RDS(ON)=34mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge.  -20V/-6A,RDS(ON)=48mΩ@VGS=-1.8V  Super high density cell design for extremely These devices are par

 4.1. gsm4401s.pdf Size:1032K _update-mosfet

GSM4403
GSM4403

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16mΩ@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

4.2. gsm4401s.pdf Size:1032K _globaltech_semi

GSM4403
GSM4403

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16mΩ@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

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