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GSM4412 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4412

Código: 4412

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.8 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 7.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 4 nC

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 0.035 Ohm

Empaquetado / Estuche: SOP-8

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GSM4412 Datasheet (PDF)

1.1. gsm4412.pdf Size:935K _update-mosfet

GSM4412
GSM4412

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412, N-Channel enhancement mode  30V/ 7.6A,RDS(ON)=35mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/ 6.2A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

1.2. gsm4412w.pdf Size:906K _update-mosfet

GSM4412
GSM4412

GSM4412W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412W, N-Channel enhancement mode  30V/ 7.6A,RDS(ON)=35mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/ 6.2A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 5.1. gsm4401s.pdf Size:1032K _update-mosfet

GSM4412
GSM4412

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16mΩ@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

5.2. gsm4435.pdf Size:776K _update-mosfet

GSM4412
GSM4412

GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37mΩ@VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage lo

 5.3. gsm4486.pdf Size:929K _update-mosfet

GSM4412
GSM4412

GSM4486 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4486, N-Channel enhancement mode  20V/9A,RDS(ON)=14mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/7A,RDS(ON)=17mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/5A,RDS(ON)=21mΩ@VGS=1.8V  Super high density cell design for extremely These devices are particularly

5.4. gsm4422.pdf Size:484K _update-mosfet

GSM4412
GSM4412

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4422, N-Channel enhancement mode  30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/ 6.0A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  30V/ 5.2A,RDS(ON)=50mΩ@VGS=2.5V These devices are particularly suited for low  Super high density cell design for

 5.5. gsm4403.pdf Size:793K _update-mosfet

GSM4412
GSM4412

GSM4403 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM4403, P-Channel enhancement mode  -20V/-9A,RDS(ON)=26mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology to  -20V/-8A,RDS(ON)=34mΩ@VGS=-2.5V provide excellent RDS(ON), low gate charge.  -20V/-6A,RDS(ON)=48mΩ@VGS=-1.8V  Super high density cell design for extremely These devices are par

5.6. gsm4440w.pdf Size:859K _update-mosfet

GSM4412
GSM4412

GSM4440W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440W, N-Channel enhancement mode  60V/6.8A,RDS(ON)=42mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  60V/5.6A,RDS(ON)=50mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

5.7. gsm4424w.pdf Size:1210K _update-mosfet

GSM4412
GSM4412

GSM4424W 40V N-Channel Enhancement Mode MOSFET Product Description Features  40V/8A,RDS(ON)=22mΩ@VGS=10V GSM4424W, N-Channel enhancement mode  40V/6A,RDS(ON)=28mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON)  SOP-8P package design These devices are p

5.8. gsm4435s.pdf Size:1035K _update-mosfet

GSM4412
GSM4412

GSM4435S GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=26mΩ@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

5.9. gsm4440.pdf Size:1289K _update-mosfet

GSM4412
GSM4412

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440, N-Channel enhancement mode  60V/6.8A,RDS(ON)=42mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  60V/5.6A,RDS(ON)=50mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

5.10. gsm4435w.pdf Size:981K _update-mosfet

GSM4412
GSM4412

GSM4435W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=24mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=35mΩ@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-

5.11. gsm4447.pdf Size:1055K _update-mosfet

GSM4412
GSM4412

GSM4447 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4447, P-Channel enhancement mode  -40V/-10A,RDS(ON)=40mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology to  -40V/-8A,RDS(ON)=55mΩ@VGS=-4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

5.12. gsm4424.pdf Size:1239K _update-mosfet

GSM4412
GSM4412

40V N-Channel Enhancement Mode MOSFET Product Description Features  40V/8A,RDS(ON)= 24mΩ@VGS=10V GSM4424, N-Channel enhancement mode  40V/6A,RDS(ON)= 44mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low  SOP-8

5.13. gsm4435ws.pdf Size:1086K _update-mosfet

GSM4412
GSM4412

GSM4435WS GSM4435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)= 17mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)= 24mΩ@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

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