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GSM4412W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4412W

Código: 4412W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.8 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 7.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 4 nC

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 0.035 Ohm

Empaquetado / Estuche: SOP-8P

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GSM4412W Datasheet (PDF)

1.1. gsm4412w.pdf Size:906K _update-mosfet

GSM4412W
GSM4412W

GSM4412W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412W, N-Channel enhancement mode  30V/ 7.6A,RDS(ON)=35mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/ 6.2A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

1.2. gsm4412w.pdf Size:906K _globaltech_semi

GSM4412W
GSM4412W

GSM4412W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412W, N-Channel enhancement mode  30V/ 7.6A,RDS(ON)=35mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/ 6.2A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 3.1. gsm4412.pdf Size:935K _update-mosfet

GSM4412W
GSM4412W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412, N-Channel enhancement mode  30V/ 7.6A,RDS(ON)=35mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/ 6.2A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

3.2. gsm4412.pdf Size:935K _globaltech_semi

GSM4412W
GSM4412W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412, N-Channel enhancement mode  30V/ 7.6A,RDS(ON)=35mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/ 6.2A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

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