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GSM4412W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM4412W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOP-8P
 

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GSM4412W Datasheet (PDF)

 ..1. Size:906K  globaltech semi
gsm4412w.pdf pdf_icon

GSM4412W

GSM4412W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412W, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.2A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 7.1. Size:935K  globaltech semi
gsm4412.pdf pdf_icon

GSM4412W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.2A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

 9.1. Size:1289K  globaltech semi
gsm4440.pdf pdf_icon

GSM4412W

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.2. Size:484K  globaltech semi
gsm4422.pdf pdf_icon

GSM4412W

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4422, N-Channel enhancement mode 30V/ 6.8A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.0A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/ 5.2A,RDS(ON)=50m@VGS=2.5V These devices are particularly suited for low Super high density cell design for

Otros transistores... GSM4210W , GSM4214 , GSM4214W , GSM4228 , GSM4248W , GSM4401S , GSM4403 , GSM4412 , IRFB4115 , GSM4422 , MTB36N06V , PHP36N06E , PHB36N06E , FTD36N06N , SFP65N06 , IPI16CN10N , GSM4424 .

History: IRF7389PBF-1 | KTK597TV | IRL1404SPBF | IPD75N04S4-06 | AOD402 | TMA10N60H | STP4931

 

 
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