GSM4447 Datasheet. Equivalente

 ..1. Size:1055K  globaltech semi
 gsm4447.pdf

GSM4447 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4447, P-Channel enhancement mode -40V/-10A,RDS(ON)=40m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8A,RDS(ON)=55m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.1. Size:1289K  globaltech semi
 gsm4440.pdf

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 8.2. Size:859K  globaltech semi
 gsm4440w.pdf

 9.1. Size:906K  globaltech semi
 gsm4412w.pdf

GSM4412W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412W, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.2A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:484K  globaltech semi
 gsm4422.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4422, N-Channel enhancement mode 30V/ 6.8A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.0A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/ 5.2A,RDS(ON)=50m @VGS=2.5V These devices are particularly suited for low Super high density cell design for

 9.3. Size:1086K  globaltech semi
 gsm4435ws.pdf

GSM4435WS GSM4435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)= 17m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)= 24m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.4. Size:935K  globaltech semi
 gsm4412.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4412, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/ 6.2A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

 9.5. Size:981K  globaltech semi
 gsm4435w.pdf

GSM4435W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=24m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=35m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-

 9.6. Size:1239K  globaltech semi
 gsm4424.pdf

40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/8A,RDS(ON)= 24m @VGS=10V GSM4424, N-Channel enhancement mode 40V/6A,RDS(ON)= 44m @VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low SOP-8

 9.7. Size:776K  globaltech semi
 gsm4435.pdf

GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37m @VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage lo

 9.8. Size:1210K  globaltech semi
 gsm4424w.pdf

GSM4424W 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/8A,RDS(ON)=22m @VGS=10V GSM4424W, N-Channel enhancement mode 40V/6A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are p

 9.9. Size:1035K  globaltech semi
 gsm4435s.pdf

GSM4435S GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=26m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.10. Size:1032K  globaltech semi
 gsm4401s.pdf

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.11. Size:793K  globaltech semi
 gsm4403.pdf

GSM4403 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM4403, P-Channel enhancement mode -20V/-9A,RDS(ON)=26m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-8A,RDS(ON)=34m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-6A,RDS(ON)=48m @VGS=-1.8V Super high density cell design for extremely These devices are par

 9.12. Size:929K  globaltech semi
 gsm4486.pdf

GSM4486 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4486, N-Channel enhancement mode 20V/9A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/7A,RDS(ON)=17m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=21m @VGS=1.8V Super high density cell design for extremely These devices are particularly