GSM4516W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4516W

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: SOP-8P

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GSM4516W datasheet

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 gsm4516w.pdf pdf_icon

GSM4516W

GSM4516W 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m @VGS=-10V voltag

 7.1. Size:1304K  globaltech semi
 gsm4516.pdf pdf_icon

GSM4516W

GSM4516 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m @VGS=-10V voltage power man

 8.1. Size:1077K  globaltech semi
 gsm4510s.pdf pdf_icon

GSM4516W

GSM4510S 100V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 100V/6.8A,RDS(ON)=150m @VGS=10V provide excellent RDS(ON), low gate charge. 100V/5.6A,RDS(ON)=165m @VGS=4.5V P-Channel These devices are particularly suited for low -100V/-6.2A,RDS(ON)=198m @VGS=

 9.1. Size:1207K  globaltech semi
 gsm4559.pdf pdf_icon

GSM4516W

GSM4559 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4559, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/6.8A,RDS(ON)=42m @VGS=10V provide excellent RDS(ON), low gate charge. 60V/5.6A,RDS(ON)=50m @VGS=4.5V P-Channel These devices are particularly suited for low -60V/-4.0A,RDS(ON)=100m @VGS=-10V v

MOSTRAR MÁS

Otros transistores... GSM4435W, GSM4435WS, GSM4440, GSM4440W, GSM4447, GSM4486, GSM4510S, GSM4516, 13N50, GSM4535, GSM4535W, GSM4539S, GSM4539WS, GSM4546, GSM4559, GSM4599, GSM4599W