GSM4953WS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSM4953WS
   Código: 4953WS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOP-8P

Búsqueda de reemplazo de MOSFET GSM4953WS

GSM4953WS Datasheet (PDF)

..1. Size:944K globaltech semi
gsm4953ws.pdf

GSM4953WS GSM4953WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953WS, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=60m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=80m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particula

7.1. Size:438K globaltech semi
gsm4953s.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m@VGS= -10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m@VGS= - 4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt

9.1. Size:939K globaltech semi
gsm4998.pdf

GSM4998 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=145m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

9.2. Size:1468K globaltech semi
gsm4924.pdf

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 24m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)= 48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma

9.3. Size:834K globaltech semi
gsm4925ws.pdf

GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

9.4. Size:731K globaltech semi
gsm4906.pdf

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4906, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/5.6A,RDS(ON)=70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

9.5. Size:719K globaltech semi
gsm4925.pdf

GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

9.6. Size:438K globaltech semi
gsm4946.pdf

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

9.7. Size:1070K globaltech semi
gsm4936ws.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4936WS, N-Channel enhancement mode 30V/5.8A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.5A,RDS(ON)=46m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices areW particularly suited for low low RDS (ON) voltage pow

9.8. Size:859K globaltech semi
gsm4900w.pdf

GSM4900W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4900W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=140m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

9.9. Size:916K globaltech semi
gsm4998w.pdf

GSM4998W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

9.10. Size:801K globaltech semi
gsm4997.pdf

GSM4997 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/5.6A,RDS(ON)=75m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

9.11. Size:1478K globaltech semi
gsm4924w.pdf

GSM4924W 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924W, N-Channel enhancement mode 40V/8A,RDS(ON)=22m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)=28m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S

9.12. Size:432K globaltech semi
gsm4946w.pdf

GSM4946W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

9.13. Size:833K globaltech semi
gsm4925s.pdf

GSM4925S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925S, P-Channel enhancement mode -30V/-7.5A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

9.14. Size:408K globaltech semi
gsm4946bw.pdf

GSM4946BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=65m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

9.15. Size:1059K globaltech semi
gsm4936s.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4936S, N-Channel enhancement mode 30V/5.8A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.5A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

9.16. Size:823K globaltech semi
gsm4925w.pdf

GSM4925W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925W, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 30m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 36m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

9.17. Size:830K globaltech semi
gsm4948.pdf

GSM4948 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM4948, P-Channel enhancement mode -60V/-4.0A,RDS(ON)= 100m@VGS= -10V OSFET, uses Advanced Trench Technology to -60V/-3.0A,RDS(ON)= 120m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

9.18. Size:846K globaltech semi
gsm4922w.pdf

GSM4922W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4922W, N-Channel enhancement mode 100V/2.0A,RDS(ON)=290m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.5A,RDS(ON)=300m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

9.19. Size:831K globaltech semi
gsm4996.pdf

GSM4996 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/6.8A,RDS(ON)=75m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: