GSM4998W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM4998W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SOP-8P

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GSM4998W datasheet

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GSM4998W

GSM4998W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=130m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 7.1. Size:939K  globaltech semi
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GSM4998W

GSM4998 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=145m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 8.1. Size:801K  globaltech semi
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GSM4998W

GSM4997 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology to 90V/5.6A,RDS(ON)=75m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.2. Size:831K  globaltech semi
 gsm4996.pdf pdf_icon

GSM4998W

GSM4996 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology to 90V/6.8A,RDS(ON)=75m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

MOSTRAR MÁS

Otros transistores... GSM4946BW, GSM4946W, GSM4948, GSM4953S, GSM4953WS, GSM4996, GSM4997, GSM4998, IRF1405, GSM5004S, GSM5008S, GSM501DEA, GSM5604, GSM5606, GSM6202S, GSM6236S, GSM6332