GSM8451 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSM8451
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.305 Ohm
   Paquete / Cubierta: SOT-223

Búsqueda de reemplazo de MOSFET GSM8451

GSM8451 Datasheet (PDF)

..1. Size:1463K globaltech semi
gsm8451.pdf

GSM8451 GSM8451 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-3.0A,RDS(ON)=305m@VGS=-10V GSM8451, P-Channel enhancement mode -60V/-2.0A,RDS(ON)=330m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

8.1. Size:874K globaltech semi
gsm8459.pdf

GSM8459 GSM8459 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/6.0A,RDS(ON)=44m@VGS=10V GSM8459, N-Channel enhancement mode 30V/5.5A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

8.2. Size:787K globaltech semi
gsm8452.pdf

GSM8452 GSM8452 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-5.0A,RDS(ON)=70m@VGS=-10V GSM8452, P-Channel enhancement mode -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularl

9.1. Size:1204K globaltech semi
gsm8471.pdf

GSM8471 GSM8471 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (

9.2. Size:876K globaltech semi
gsm8439.pdf

GSM8439 GSM8439 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/6.0A,RDS(ON)=45m@VGS=4.5V GSM8439, N-Channel enhancement mode 30V/5.5A,RDS(ON)=55m@VGS=2.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

9.3. Size:910K globaltech semi
gsm8411.pdf

GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m@VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

9.4. Size:837K globaltech semi
gsm8483.pdf

GSM8483 GSM8483 100V P-Channel Enhancement Mode MOSFET Product Description Features -100V/-3.8A,RDS(ON)=260m@VGS=-10V GSM8483, P-Channel enhancement mode -100V/-2.6A,RDS(ON)=290m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. SOT-223 package de

9.5. Size:903K globaltech semi
gsm8473.pdf

GSM8473 GSM8473 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-4.8A,RDS(ON)=135m@VGS=-10V GSM8473, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=155m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particula

9.6. Size:879K globaltech semi
gsm8412.pdf

GSM8412 GSM8412 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/3.6A,RDS(ON)=300m@VGS=10V GSM8412, N-Channel enhancement mode 100V/3.0A,RDS(ON)=310m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. SOT-223 package design

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