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GSM8459 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM8459
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
   Paquete / Cubierta: SOT-223
 

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GSM8459 Datasheet (PDF)

 ..1. Size:874K  globaltech semi
 gsm8459.pdf pdf_icon

GSM8459

GSM8459 GSM8459 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/6.0A,RDS(ON)=44m@VGS=10V GSM8459, N-Channel enhancement mode 30V/5.5A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 8.1. Size:787K  globaltech semi
 gsm8452.pdf pdf_icon

GSM8459

GSM8452 GSM8452 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-5.0A,RDS(ON)=70m@VGS=-10V GSM8452, P-Channel enhancement mode -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularl

 8.2. Size:1463K  globaltech semi
 gsm8451.pdf pdf_icon

GSM8459

GSM8451 GSM8451 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-3.0A,RDS(ON)=305m@VGS=-10V GSM8451, P-Channel enhancement mode -60V/-2.0A,RDS(ON)=330m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 9.1. Size:1204K  globaltech semi
 gsm8471.pdf pdf_icon

GSM8459

GSM8471 GSM8471 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (

MOSTRAR MÁS

Otros transistores... GSM7923WS , GSM8205 , GSM8206 , GSM8411 , GSM8412 , GSM8439 , GSM8451 , GSM8452 , 7N65 , GSM8471 , GSM8473 , GSM8483 , GSM8803 , GSM8816 , GSM8822 , GSM8822S , GSM8823 .

History: HTD1K5N10 | QM3014M6 | BL7N60A-D

 

 
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