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GSM8473 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM8473
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
   Paquete / Cubierta: SOT-223
 

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GSM8473 Datasheet (PDF)

 ..1. Size:903K  globaltech semi
 gsm8473.pdf pdf_icon

GSM8473

GSM8473 GSM8473 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-4.8A,RDS(ON)=135m@VGS=-10V GSM8473, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=155m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particula

 8.1. Size:1204K  globaltech semi
 gsm8471.pdf pdf_icon

GSM8473

GSM8471 GSM8471 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (

 9.1. Size:876K  globaltech semi
 gsm8439.pdf pdf_icon

GSM8473

GSM8439 GSM8439 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/6.0A,RDS(ON)=45m@VGS=4.5V GSM8439, N-Channel enhancement mode 30V/5.5A,RDS(ON)=55m@VGS=2.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 9.2. Size:910K  globaltech semi
 gsm8411.pdf pdf_icon

GSM8473

GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m@VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

MOSTRAR MÁS

Otros transistores... GSM8206 , GSM8411 , GSM8412 , GSM8439 , GSM8451 , GSM8452 , GSM8459 , GSM8471 , 2N7000 , GSM8483 , GSM8803 , GSM8816 , GSM8822 , GSM8822S , GSM8823 , GSM8904 , GSM8918 .

History: PSMN3R7-25YLC | AOT20N25L | IPD144N06NG | NTD4910N-1G | PHM12NQ20T | SIHFBC30 | UTT200N02

 

 
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