GSM8803 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM8803

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 165 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: TSSOP-8P

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GSM8803 datasheet

 ..1. Size:616K  globaltech semi
 gsm8803.pdf pdf_icon

GSM8803

GSM8803 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8803, P-Channel enhancement mode -20V/-5.4A,RDS(ON)=32m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-4.0A,RDS(ON)=42m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-3.0A,RDS(ON)=58m @VGS=-1.8V Super high density cell design for extremely These devic

 9.1. Size:439K  globaltech semi
 gsm8822.pdf pdf_icon

GSM8803

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/4.8A,RDS(ON)=32m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m @VGS=1.8V These devices are particularly suited for low Super high density cell desig

 9.2. Size:432K  globaltech semi
 gsm8822s.pdf pdf_icon

GSM8803

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

 9.3. Size:781K  globaltech semi
 gsm8816.pdf pdf_icon

GSM8803

GSM8816 30V Common-Drain N-Channel Enhancement Mode MOSFET Product Description Features GSM8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5A,RDS(ON)=24m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m @VGS=2.5V Super high density cell design for extremely These devices

MOSTRAR MÁS

Otros transistores... GSM8412, GSM8439, GSM8451, GSM8452, GSM8459, GSM8471, GSM8473, GSM8483, STP75NF75, GSM8816, GSM8822, GSM8822S, GSM8823, GSM8904, GSM8918, GSM8931, GSM8936