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GSM8803 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM8803
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: TSSOP-8P
     - Selección de transistores por parámetros

 

GSM8803 Datasheet (PDF)

 ..1. Size:616K  globaltech semi
 gsm8803.pdf pdf_icon

GSM8803

GSM8803 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8803, P-Channel enhancement mode -20V/-5.4A,RDS(ON)=32m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-4.0A,RDS(ON)=42m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-3.0A,RDS(ON)=58m@VGS=-1.8V Super high density cell design for extremely These devic

 9.1. Size:439K  globaltech semi
 gsm8822.pdf pdf_icon

GSM8803

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/4.8A,RDS(ON)=32m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited for low Super high density cell desig

 9.2. Size:432K  globaltech semi
 gsm8822s.pdf pdf_icon

GSM8803

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

 9.3. Size:781K  globaltech semi
 gsm8816.pdf pdf_icon

GSM8803

GSM8816 30V Common-Drain N-Channel Enhancement Mode MOSFET Product Description Features GSM8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5A,RDS(ON)=24m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m@VGS=2.5V Super high density cell design for extremely These devices

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FTK5N80DD | CSD85312Q3E

 

 
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