GSM8995 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM8995

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm

Encapsulados: SOT-89

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GSM8995 datasheet

 ..1. Size:917K  globaltech semi
 gsm8995.pdf pdf_icon

GSM8995

GSM8995 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)=125m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)=165m @ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for

 9.1. Size:887K  globaltech semi
 gsm8988.pdf pdf_icon

GSM8995

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo

 9.2. Size:848K  globaltech semi
 gsm8904.pdf pdf_icon

GSM8995

GSM8904 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 9.3. Size:830K  globaltech semi
 gsm8936.pdf pdf_icon

GSM8995

GSM8936 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m @ VGS=3.3V Super high density cell design for extremely low These devices are p

MOSTRAR MÁS

Otros transistores... GSM8936, GSM8943, GSM8968, GSM8987, GSM8987W, GSM8988, GSM8988W, GSM8989, IRF1010E, GSM9407, GSM9434WS, GSM9435S, GSM9435WS, GSM9498, GSM9510S, GSM9565S, GSM9566W