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GSM8995 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM8995
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: SOT-89
 

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GSM8995 Datasheet (PDF)

 ..1. Size:917K  globaltech semi
 gsm8995.pdf pdf_icon

GSM8995

GSM8995 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)=125m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)=165m@ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for

 9.1. Size:887K  globaltech semi
 gsm8988.pdf pdf_icon

GSM8995

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo

 9.2. Size:848K  globaltech semi
 gsm8904.pdf pdf_icon

GSM8995

GSM8904 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 9.3. Size:830K  globaltech semi
 gsm8936.pdf pdf_icon

GSM8995

GSM8936 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m@ VGS=3.3V Super high density cell design for extremely low These devices are p

MOSTRAR MÁS

Otros transistores... GSM8936 , GSM8943 , GSM8968 , GSM8987 , GSM8987W , GSM8988 , GSM8988W , GSM8989 , IRF530 , GSM9407 , GSM9434WS , GSM9435S , GSM9435WS , GSM9498 , GSM9510S , GSM9565S , GSM9566W .

History: SWD6N70DB | IPC100N04S5L-1R1 | 2SK3774-01SJ | UPA2352T1P

 

 
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