GSM9566W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM9566W

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SOP-8P

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GSM9566W datasheet

 ..1. Size:1264K  globaltech semi
 gsm9566w.pdf pdf_icon

GSM9566W

GSM9566W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)=80m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.5A,RDS(ON)=105m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

 8.1. Size:997K  globaltech semi
 gsm9565s.pdf pdf_icon

GSM9566W

GSM9565S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM9565S, P-Channel enhancement mode -40V/-8.6A,RDS(ON)=58m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-6.2A,RDS(ON)=86m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.1. Size:985K  globaltech semi
 gsm9510s.pdf pdf_icon

GSM9566W

GSM9510S 100V P-Channel Enhancement Mode MOSFET Product Description Features GSM9510S, P-Channel enhancement mode -100V/-8.0A,RDS(ON)=200m @VGS=-10V MOSFET, uses Advanced Trench Technology to -100V/-7.0A,RDS(ON)=220m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

 9.2. Size:998K  globaltech semi
 gsm9575s.pdf pdf_icon

GSM9566W

GSM9575S 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)=68m @VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-12A,RDS(ON)=78m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l

MOSTRAR MÁS

Otros transistores... GSM8995, GSM9407, GSM9434WS, GSM9435S, GSM9435WS, GSM9498, GSM9510S, GSM9565S, IRFP450, GSM9575S, GSM9576, GSM9910, GSM9971, GSM9971B, GSM9972S, GSM9977, GSM9987