2SK1592
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1592
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 0.5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150
nS
Cossⓘ - Capacitancia
de salida: 34
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2
Ohm
Paquete / Cubierta:
SC62
- Selección de transistores por parámetros
2SK1592
Datasheet (PDF)
..2. Size:1002K kexin
2sk1592.pdf 
SMD Type MOSFETN-Channel MOSFET2SK15921.70 0.1 Features VDS (V) = 60V ID = 0.5A RDS(ON) 2.5 (VGS = 4V) 0.42 0.10.46 0.1 RDS(ON) 2 (VGS = 10V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Continuous Drain Current ID 0.5A Pulse
8.6. Size:89K renesas
2sk1590c.pdf
Preliminary Data Sheet 2SK1590C R07DS1276EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jun 24, 2015Description The 2SK1590C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10
8.7. Size:977K kexin
2sk1593.pdf
SMD Type MOSFETN-Channel MOSFET2SK15931.70 0.1 Features VDS (V) = 100V ID = 0.5A RDS(ON) 6 (VGS = 4V)0.42 0.10.46 0.1 RDS(ON) 5 (VGS = 10V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100V Gate-Source Voltage VGS 20 Continuous Drain Current ID 0.5A Puls
8.8. Size:1249K kexin
2sk1590-3.pdf
SMD Type MOSFETN-Channel MOSFET2SK1590SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 0.2 A1 2+0.02+0.10.15 -0.02 RDS(ON) 3 (VGS = 10V) 0.95-0.1+0.11.9 -0.2 RDS(ON) 6 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VD
8.9. Size:1239K kexin
2sk1590.pdf
SMD Type MOSFETN-Channel MOSFET2SK1590SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 60V1 2 ID = 0.2 A+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 3 (VGS = 10V) RDS(ON) 6 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 6
8.10. Size:443K cn shikues
2sk1590.pdf
N-Channel Enhancement Mode MOSFET Feature SOT-23 60V/0.2A, RDS(ON) = 3.5(MAX) @VGS = 5V. Id = 0.2A RDS(ON) = 10(MAX) @VGS = 2.75V. Id = 0.2A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. Low Threshold Voltage ( 0.5V1.5V ) Make it Ideal for Low Voltage Applications. SOT-23 for Surface Mount Package. Applications 1Gate 2Sourc
8.11. Size:1268K cn vbsemi
2sk1591.pdf
2SK1591www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition100 2.8 at VGS = 10 V Low Threshold: 2 V (typ.)260 Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 2002/9
8.12. Size:841K cn vbsemi
2sk1590.pdf
2SK1590www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1
Otros transistores... 2SK1584
, 2SK1585
, 2SK1586
, 2SK1587
, 2SK1588
, 2SK1589
, 2SK1590
, 2SK1591
, IRF520
, 2SK1593
, 2SK1594
, 2SK1596
, 2SK162
, 2SK163
, 2SK1664
, 2SK1712
, 2SK1748
.
History: 2SJ197
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