INK0012AM1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: INK0012AM1
   Código: K6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 0.2 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 0.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Conductancia de drenaje-sustrato (Cd): 7 pF
   Resistencia entre drenaje y fuente RDS(on): 1 Ohm
   Paquete / Cubierta: SC-70

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INK0012AM1 Datasheet (PDF)

..1. Size:139K isahaya
ink0012ac1 ink0012am1 ink0012au1.pdf

0012A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0012A is a Silicon N-channel MOSFET. INK0012AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

8.1. Size:138K isahaya
ink0010ac1 ink0010am1 ink0010au1.pdf

0010A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0010A is a Silicon N-channel MOSFET. INK0010AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

9.1. Size:138K isahaya
ink0002ac1 ink0002am1 ink0002au1.pdf

0002A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0002A is a Silicon N-channel MOSFET. INK0002AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

9.2. Size:137K isahaya
ink0003ac1 ink0003am1 ink0003au1.pdf

0003A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0003A is a Silicon N-channel MOSFET. INK0003AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

9.3. Size:137K isahaya
ink0001ac1 ink0001am1 ink0001au1.pdf

0001A SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0001A is a Silicon N-channel MOSFET. INK0001AU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

9.4. Size:139K isahaya
ink0001bc1 ink0001bm1 ink0001bu1.pdf

0001B SERIES High speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0001B is a Silicon N-channel MOSFET. INK0001BU1 This product is most suitable for low voltage 1.5use such as portable machinery , because of 0.35 0.80.35low voltage drive and low on resistance. JEITASC-75A FEATURE JEDEC Input imped

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