SML5020BN Todos los transistores

 

SML5020BN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SML5020BN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 360 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 3500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de SML5020BN MOSFET

   - Selección ⓘ de transistores por parámetros

 

SML5020BN datasheet

 ..1. Size:30K  semelab
sml5020bn.pdf pdf_icon

SML5020BN

SML5020BN SEME LAB 4TH GENERATION MOSFET TO247 AD Package Outline. Dimensions in mm (inches) N CHANNEL 4.69 (0.185) 15.49 (0.610) 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 500V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) ID(cont) 28.0A 1.01 (0

 9.1. Size:20K  semelab
sml50a19.pdf pdf_icon

SML5020BN

SML50A19 TO 3 Package Outline. Dimensions in mm (inches) N CHANNEL 25.15 (0.99) ENHANCEMENT MODE 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) HIGH VOLTAGE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) POWER MOSFETS VDSS 500V 1 2 ID(cont) 18.5A 3 (case) RDS(on) 0.240 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Faster Switching Lower Leakage Pin 1

 9.2. Size:21K  semelab
sml50b26.pdf pdf_icon

SML5020BN

SML50B26 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 500V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 26A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.200 2.21

 9.3. Size:601K  semelab
sml50hb06.pdf pdf_icon

SML5020BN

SML50HB06 Attributes -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage 600 V Vce DC Collector Current Tc=80C Ic, nom 50 A Tc=25C Ic 75 Repetitive peak Collector Cur- tp=1msec,Tc=80C Icrm 100 A rent Total PowerDissipation Tc=25C Ptot 280 W Gate-emitte

Otros transistores... SML40M42BFN , SML40M80AFN , SML40W44 , SML5011AFN , SML501R1AN , SML501R1BN , SML501R1CN , SML501R1GN , 2SK3568 , SML5022BN , SML5025AN , SML5025BN , SML5025HN , SML5030AN , SML5030BN , SML5030HN , SML5040AN .

 

 
Back to Top

 


 
.