INK0200AC1 Todos los transistores

 

INK0200AC1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: INK0200AC1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: SC-59
 

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INK0200AC1 Datasheet (PDF)

 ..1. Size:115K  isahaya
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INK0200AC1

 9.1. Size:133K  isahaya
 ink0210ac1.pdf pdf_icon

INK0200AC1

INK0210AC1 High Speed Switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. FEATURE Input impedance is high, and not necessary to consider a drive elect

 9.2. Size:136K  isahaya
 ink0210ap1.pdf pdf_icon

INK0200AC1

INK0210AP1 High Speed Switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4machinery, because of low voltage drive and low on resistance. 1.51.6FEATURE Input impedance is high, and not necessary to MARKINGconsider a drive electric current.

 9.3. Size:121K  isahaya
 ink021aap1.pdf pdf_icon

INK0200AC1

MOSTRAR MÁS

Otros transistores... INK0102AU1 , INK0103AC1 , INK0103AM1 , INK0103AU1 , INK0112AC1 , INK0112AM1 , INK0112AU1 , INK011BAP1 , 12N60 , INK0210AC1 , INK0210AP1 , INK021AAP1 , INK0302AC1 , INK0310AP1 , IVN5001ANE , IRC530PBF , IRC540PBF .

History: BL2302 | SWD046R68E8T | SHD226703 | PNMT6N1 | SE12N65 | 2SJ599 | IXFB210N20P

 

 
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