2SK2071-01S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2071-01S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 32 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm
   Paquete / Cubierta: TO252

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2SK2071-01S Datasheet (PDF)

4.1. Size:201K fuji
2sk2071-01l-s.pdf

N-channel MOS-FET2SK2071-01L,SFAP-IIA Series 600V 6,5 2A 20W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

4.2. Size:201K inchange semiconductor
2sk2071-01l.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2071-01LFEATURESHigh speed switchingLow On-ResistanceLow driving powerHigh voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operationDESCRIPTIONSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

8.1. Size:59K 1
2sk2070.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2070N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2070 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)7.0 MAX.1.2is a switching element that can be directly driven by the output ofan IC operating at 5 V.This product has a low ON resistance and superb switchingcharacteristics and is ideal for driving the ac

8.2. Size:132K st
2sk2078 stw9na80.pdf

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

8.3. Size:218K toshiba
2sk2078.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.4. Size:94K sanyo
2sk2074.pdf

Ordering number:ENN4499N-Channel Junction Silicon FET2SK2074High-Frequency Low-NoiseAmplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier applications.unit:mm Low-noise amplifier.2034A[2SK2074]2.24.0Features Large | yfs |. Small Ciss.0.40.5 Ultralow noise figure.0.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain

8.5. Size:63K no
2sk2077.pdf

8.6. Size:224K inchange semiconductor
2sk2078.pdf

isc N-Channel MOSFET Transistor 2SK2078DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai

8.7. Size:219K inchange semiconductor
2sk2077.pdf

isc N-Channel MOSFET Transistor 2SK2077DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai

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