FIR4N65AFG Todos los transistores

 ..1. Size:3060K  first silicon
 fir4n65afg.pdf

FIR4N65AFG 650V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=13.7nC (Typ.). BVDSS=650V,ID=4A G D S RDS(on) 2.6 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assemb

 7.1. Size:3900K  first semi
 fir4n65lg.pdf

FIR4N65LG Advanced N-Ch Power MOSFET-H PIN Connection TO-252(D-PAK) General Description FIR4N65LG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching G performance and enhance the avalanche energy. The transistor S can be used in various power switching circuit for system miniaturiz

 7.2. Size:1977K  first semi
 fir4n65bpg.pdf

FIR4N65BPG Advanced N-Ch Power MOSFET PIN Connection TO-251(I-PAK) General Description FIR4N65BPGis an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state 1 2 3 resistance, pro

 7.3. Size:3702K  first semi
 fir4n65fg.pdf

FIR4N65FG Advanced N-Ch Power MOSFET-H PIN Connection TO-220F General Description FIR4N65FG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching G D S performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system g Schematic di

 7.4. Size:199K  inchange semiconductor
 fir4n65f.pdf

INCHANGE Semiconductor isc N-Channel Mosfet Transistor FIR4N65F FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) Avalanche Energy Specified Fast Switching Simple Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation D