CPC3701C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPC3701C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 0.3 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Encapsulados: SOT-89
Búsqueda de reemplazo de CPC3701C MOSFET
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CPC3701C datasheet
cpc3701c.pdf
CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an
cpc3701.pdf
CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET V(BR)DSX / RDS(ON) IDSS (min) Package Description V(BR)DGX (max) The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an
cpc3703.pdf
CPC3703 N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ RDS(ON) IDSS (min) Package Description BVDGX (max) The CPC3703 is an N-channel, depletion mode, field 250V 4 360mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e
cpc3703c.pdf
CPC3703C N-Channel Depletion-Mode Vertical DMOS FETs Description BVDSX/ RDS(ON) IDSS Package BVDGX (max) (min) The CPC3703C is an N-channel depletion mode field 250V 4.0 300mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silic
Otros transistores... FIR4N65AFG , MTM45N05E , MTP45N05E , SSS45N20B , RFP4N35 , RFP4N40 , 9N90L-T47 , CPC3701 , 2N60 , CPC3703 , CPC3703C , CPC3710 , CPC3710C , CPC3714 , CPC3714C , CPC3720 , CPC3720C .
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