CPC3701C Todos los transistores

 

CPC3701C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CPC3701C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: SOT-89
 

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CPC3701C Datasheet (PDF)

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CPC3701C

CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an

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CPC3701C

CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(ON) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an

 8.1. Size:97K  ixys
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CPC3701C

CPC3703N-Channel Depletion-ModeVertical DMOS FETsBVDSX/ RDS(ON) IDSS (min) Package DescriptionBVDGX (max)The CPC3703 is an N-channel, depletion mode, field 250V 4 360mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e

 8.2. Size:149K  ixys
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CPC3701C

CPC3703CN-Channel Depletion-ModeVertical DMOS FETsDescriptionBVDSX/ RDS(ON) IDSS PackageBVDGX (max) (min)The CPC3703C is an N-channel depletion mode field250V 4.0 300mA SOT-89 effect transistor (FET) that utilizes Clares proprietarythird generation vertical DMOS process. Thirdgeneration process realizes world class, high voltageMOSFET performance in an economical silic

MOSTRAR MÁS

Otros transistores... FIR4N65AFG , MTM45N05E , MTP45N05E , SSS45N20B , RFP4N35 , RFP4N40 , 9N90L-T47 , CPC3701 , IRF830 , CPC3703 , CPC3703C , CPC3710 , CPC3710C , CPC3714 , CPC3714C , CPC3720 , CPC3720C .

History: MDD1653RH | SWB038R10ES | IRFL110PBF | WMJ90N65C4 | STU60N3LH5-S | UJ0100 | TK5R1E06PL

 

 
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