CPC3730C Todos los transistores

CPC3730 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an econom

CPC3730 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(ON) IDSS (min) Package Description BVDGX (max) The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical

CPC3703 N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ RDS(ON) IDSS (min) Package Description BVDGX (max) The CPC3703 is an N-channel, depletion mode, field 250V 4 360mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e

CPC3714 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(on) IDSS (min) Package Description BVDGX (max) The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e

CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET V(BR)DSX / RDS(ON) IDSS (min) Package Description V(BR)DGX (max) The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an

CPC3714 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance i

CPC3720 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description The CPC3720 is an N-channel, depletion mode, field V(BR)DGX (max) effect transistor (FET) that utilizes Clare s proprietary 350VP 22 130mA SOT-89 third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an econ

CPC3703C N-Channel Depletion-Mode Vertical DMOS FETs Description BVDSX/ RDS(ON) IDSS Package BVDGX (max) (min) The CPC3703C is an N-channel depletion mode field 250V 4.0 300mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silic

CPC3710 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clare s proprietary 250VP 10 220mA SOT-89 third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance

CPC3710 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(on) IDSS (min) Package Description BVDGX (max) The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e

CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an

CPC3720 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(on) IDSS (min) Package Description The CPC3720 is an N-channel, depletion mode, field BVDGX (max) effect transistor (FET) that utilizes Clare s proprietary 350VP 22 130mA SOT-89 third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical