CPH3362 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPH3362
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 0.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 3.4 nS
Cossⓘ - Capacitancia de salida: 12 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
Encapsulados: SOT-23
Búsqueda de reemplazo de CPH3362 MOSFET
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CPH3362 datasheet
..1. Size:458K onsemi
cph3362.pdf 
Ordering number ENA2321A CPH3362 Power MOSFET http //onsemi.com 100V, 1.7 , 0.7A, Single P-Channel Features On-resistance RDS(on)1=1.3 (typ) Halogen free compliance 4V drive Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS 20 V Drain
8.1. Size:401K 1
cph3360.pdf
CPH3360 Ordering number ENA0114 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3360 Applications Features ON-resistance RDS(on)1=233m (typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sourc
9.1. Size:393K 1
cph3356.pdf
CPH3356 Ordering number ENA1124 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3356 Applications Features 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 1
9.2. Size:393K 1
cph3350.pdf
CPH3350 Ordering number ENA0151 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3350 Applications Features Ultrahigh-speed switching 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VG
9.3. Size:132K sanyo
cph3304.pdf
Ordering number EN5987 P-Channel MOS Silicon FET CPH3304 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152 4V drive. [CPH3304] 2.9 0.15 0.4 3 0 to 0.1 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions R
9.4. Size:388K sanyo
cph3355.pdf
CPH3355 Ordering number ENA1905 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3355 Applications Features ON-resistance RDS(on)1=120m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sou
9.5. Size:42K sanyo
cph3306.pdf
Ordering number EN6438 P-Channel Silicon MOSFET CPH3306 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3306] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratin
9.6. Size:61K sanyo
cph3348.pdf
Ordering number ENA0922 CPH3348 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3348 Applications Features Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC)
9.7. Size:35K sanyo
cph3327.pdf
Ordering number ENN7914 CPH3327 P-Channel Silicon MOSFET General-Purpose Switching Device CPH3327 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --0.6
9.8. Size:30K sanyo
cph3317.pdf
Ordering number ENN7121 CPH3317 P-Channel Silicon MOSFET CPH3317 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3317] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond
9.9. Size:27K sanyo
cph3314.pdf
Ordering number ENN6909 CPH3314 P-Channel Silicon MOSFET CPH3314 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3314] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condit
9.10. Size:28K sanyo
cph3313.pdf
Ordering number ENN6925 CPH3313 P-Channel Silicon MOSFET CPH3313 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3313] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond
9.11. Size:142K sanyo
cph3303.pdf
Ordering number EN5988 P-Channel MOS Silicon FET CPH3303 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152 2.5V drive. [CPH3303] 2.9 0.15 0.4 3 0 to 0.1 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions
9.12. Size:34K sanyo
cph3340.pdf
Ordering number ENA0090A CPH3340 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3340 Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS
9.13. Size:30K sanyo
cph3318.pdf
Ordering number ENN7122 CPH3318 P-Channel Silicon MOSFET CPH3318 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3318] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condit
9.14. Size:370K sanyo
cph3351.pdf
CPH3351 Ordering number ENA1880 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3351 Applications Features ON-resistance RDS(on)1=190m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Sou
9.15. Size:33K sanyo
cph3305.pdf
Ordering number ENN6426 P-Channel Silicon MOSFET CPH3305 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3305] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rati
9.16. Size:35K sanyo
cph3341.pdf
Ordering number ENA0091 CPH3341 P-Channel Silicon MOSFET General-Purpose Switching Device CPH3341 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --5 A
9.17. Size:28K sanyo
cph3308.pdf
Ordering number ENN7075 CPH3308 P-Channel Silicon MOSFET CPH3308 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3308] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condit
9.18. Size:35K sanyo
cph3324.pdf
Ordering number ENN8024 CPH3324 P-Channel Silicon MOSFET General-Purpose Switching Device CPH3324 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --1.2 A
9.19. Size:27K sanyo
cph3310.pdf
Ordering number ENN6776 CPH3310 P-Channel Silicon MOSFET CPH3310 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3310] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond
9.20. Size:29K sanyo
cph3307.pdf
Ordering number ENN6996 CPH3307 P-Channel Silicon MOSFET CPH3307 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3307] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi
9.21. Size:400K onsemi
cph3351.pdf
CPH3351 Power MOSFET www.onsemi.com -60V, 250m , -1.8A, Single P-Channel VDSS RDS(on) Max ID Max Features 250m @ -10V Low On-Resistance -60V 330m @ -4.5V -1.8A 4V Drive 350m @ -4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications P-Channel Absolute Maximum Ratings at Ta = 25 C 3 Param
Otros transistores... CPC5602
, CPC5602C
, CPC5603
, CPC5603C
, CPH3324
, CPH3327
, CPH3340
, CPH3341
, MMIS60R580P
, CPH3427
, CPH3430
, CPH3442
, CPH3459
, CPH3461
, CPH3462
, CPH5852
, CPH5871
.
